Room-temperature electroluminescence from metal-oxide-silicon-tunneling diodes on (110) substrates

Chee Wee Liu; Min Hung Lee; Shu Tong Chang; Miin Jang Chen; Ching Fuh Lin

doi:10.1143/jjap.39.l1016

Room-temperature electroluminescence from metal-oxide-silicon-tunneling diodes on (110) substrates

Chee Wee Liu, Min Hung Lee, Shu Tong Chang, Miin Jang Chen, Ching Fuh Lin

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

We report the band-edge electroluminescence at room temperature from metal-oxide-silicon tunneling diodes on (110) substrates. An electron-hole plasma recombination model can be used to fit the emission line shape. The reliability of this electroluminescence is studied and the emission intensity varies within 10% during a 2.5 × 10⁴ C/cm² stress. A comprehensive illustration composed of localized holes, phonons, and interface roughness is given to describe the radiative process. The picture can be used to explain the enhanced electroluminescence intensity, as compared to photoluminescence, and can be used to understand the substrate orientation effect on electroluminescence intensity.

原文	英語
頁（從 - 到）	L1016-L1018
期刊	Japanese Journal of Applied Physics
卷	39
發行號	10 B
DOIs	https://doi.org/10.1143/jjap.39.l1016
出版狀態	已發佈 - 2000 10月 15
對外發佈	是

ASJC Scopus subject areas

一般工程
一般物理與天文學

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10.1143/jjap.39.l1016

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title = "Room-temperature electroluminescence from metal-oxide-silicon-tunneling diodes on (110) substrates",

abstract = "We report the band-edge electroluminescence at room temperature from metal-oxide-silicon tunneling diodes on (110) substrates. An electron-hole plasma recombination model can be used to fit the emission line shape. The reliability of this electroluminescence is studied and the emission intensity varies within 10% during a 2.5 × 104 C/cm2 stress. A comprehensive illustration composed of localized holes, phonons, and interface roughness is given to describe the radiative process. The picture can be used to explain the enhanced electroluminescence intensity, as compared to photoluminescence, and can be used to understand the substrate orientation effect on electroluminescence intensity.",

author = "Liu, {Chee Wee} and Lee, {Min Hung} and Chang, {Shu Tong} and Chen, {Miin Jang} and Lin, {Ching Fuh}",

year = "2000",

month = oct,

day = "15",

doi = "10.1143/jjap.39.l1016",

language = "English",

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T1 - Room-temperature electroluminescence from metal-oxide-silicon-tunneling diodes on (110) substrates

AU - Liu, Chee Wee

AU - Lee, Min Hung

AU - Chang, Shu Tong

AU - Chen, Miin Jang

AU - Lin, Ching Fuh

PY - 2000/10/15

Y1 - 2000/10/15

N2 - We report the band-edge electroluminescence at room temperature from metal-oxide-silicon tunneling diodes on (110) substrates. An electron-hole plasma recombination model can be used to fit the emission line shape. The reliability of this electroluminescence is studied and the emission intensity varies within 10% during a 2.5 × 104 C/cm2 stress. A comprehensive illustration composed of localized holes, phonons, and interface roughness is given to describe the radiative process. The picture can be used to explain the enhanced electroluminescence intensity, as compared to photoluminescence, and can be used to understand the substrate orientation effect on electroluminescence intensity.

AB - We report the band-edge electroluminescence at room temperature from metal-oxide-silicon tunneling diodes on (110) substrates. An electron-hole plasma recombination model can be used to fit the emission line shape. The reliability of this electroluminescence is studied and the emission intensity varies within 10% during a 2.5 × 104 C/cm2 stress. A comprehensive illustration composed of localized holes, phonons, and interface roughness is given to describe the radiative process. The picture can be used to explain the enhanced electroluminescence intensity, as compared to photoluminescence, and can be used to understand the substrate orientation effect on electroluminescence intensity.

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DO - 10.1143/jjap.39.l1016

M3 - Article

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SN - 0021-4922

VL - 39

SP - L1016-L1018

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 10 B

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Room-temperature electroluminescence from metal-oxide-silicon-tunneling diodes on (110) substrates

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