Room-temperature electroluminescence from metal-oxide-silicon-tunneling diodes on (110) substrates

Chee Wee Liu, Min Hung Lee, Shu Tong Chang, Miin Jang Chen, Ching Fuh Lin

研究成果: 雜誌貢獻期刊論文同行評審

2 引文 斯高帕斯(Scopus)


We report the band-edge electroluminescence at room temperature from metal-oxide-silicon tunneling diodes on (110) substrates. An electron-hole plasma recombination model can be used to fit the emission line shape. The reliability of this electroluminescence is studied and the emission intensity varies within 10% during a 2.5 × 104 C/cm2 stress. A comprehensive illustration composed of localized holes, phonons, and interface roughness is given to describe the radiative process. The picture can be used to explain the enhanced electroluminescence intensity, as compared to photoluminescence, and can be used to understand the substrate orientation effect on electroluminescence intensity.

頁(從 - 到)L1016-L1018
期刊Japanese Journal of Applied Physics
發行號10 B
出版狀態已發佈 - 2000 10月 15

ASJC Scopus subject areas

  • 一般工程
  • 一般物理與天文學


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