TY - JOUR
T1 - Room-temperature electroluminescence from metal-oxide-silicon-tunneling diodes on (110) substrates
AU - Liu, Chee Wee
AU - Lee, Min Hung
AU - Chang, Shu Tong
AU - Chen, Miin Jang
AU - Lin, Ching Fuh
PY - 2000/10/15
Y1 - 2000/10/15
N2 - We report the band-edge electroluminescence at room temperature from metal-oxide-silicon tunneling diodes on (110) substrates. An electron-hole plasma recombination model can be used to fit the emission line shape. The reliability of this electroluminescence is studied and the emission intensity varies within 10% during a 2.5 × 104 C/cm2 stress. A comprehensive illustration composed of localized holes, phonons, and interface roughness is given to describe the radiative process. The picture can be used to explain the enhanced electroluminescence intensity, as compared to photoluminescence, and can be used to understand the substrate orientation effect on electroluminescence intensity.
AB - We report the band-edge electroluminescence at room temperature from metal-oxide-silicon tunneling diodes on (110) substrates. An electron-hole plasma recombination model can be used to fit the emission line shape. The reliability of this electroluminescence is studied and the emission intensity varies within 10% during a 2.5 × 104 C/cm2 stress. A comprehensive illustration composed of localized holes, phonons, and interface roughness is given to describe the radiative process. The picture can be used to explain the enhanced electroluminescence intensity, as compared to photoluminescence, and can be used to understand the substrate orientation effect on electroluminescence intensity.
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U2 - 10.1143/jjap.39.l1016
DO - 10.1143/jjap.39.l1016
M3 - Article
AN - SCOPUS:0034292051
VL - 39
SP - L1016-L1018
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 10 B
ER -