Room-temperature electroluminescence from electron-hole plasmas in the metal-oxide-silicon tunneling diodes

C. W. Liu; M. H. Lee; Miin Jang Chen; I. C. Lin; Ching Fuh Lin

doi:10.1063/1.126081

Room-temperature electroluminescence from electron-hole plasmas in the metal-oxide-silicon tunneling diodes

C. W. Liu^*, M. H. Lee, Miin Jang Chen, I. C. Lin, Ching Fuh Lin

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

93 引文斯高帕斯（Scopus）

摘要

An electron-hole plasma recombination model is used to fit the room-temperature electroluminescence from metal-oxide-silicon tunneling diodes. The relatively narrow line shape in the emission spectra can be understood by the quasi-Fermi level positions of electrans and holes, which both lie in the band gap. This model also gives a narrower band gap than that of bulk silicon. The surface band bending in the Si/oxide interface is responsible for this energy gap reduction.

原文	英語
頁（從 - 到）	1516-1518
頁數	3
期刊	Applied Physics Letters
卷	76
發行號	12
DOIs	https://doi.org/10.1063/1.126081
出版狀態	已發佈 - 2000 3月 20
對外發佈	是

ASJC Scopus subject areas

物理與天文學（雜項）

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10.1063/1.126081

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abstract = "An electron-hole plasma recombination model is used to fit the room-temperature electroluminescence from metal-oxide-silicon tunneling diodes. The relatively narrow line shape in the emission spectra can be understood by the quasi-Fermi level positions of electrans and holes, which both lie in the band gap. This model also gives a narrower band gap than that of bulk silicon. The surface band bending in the Si/oxide interface is responsible for this energy gap reduction.",

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AU - Lin, Ching Fuh

PY - 2000/3/20

Y1 - 2000/3/20

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AB - An electron-hole plasma recombination model is used to fit the room-temperature electroluminescence from metal-oxide-silicon tunneling diodes. The relatively narrow line shape in the emission spectra can be understood by the quasi-Fermi level positions of electrans and holes, which both lie in the band gap. This model also gives a narrower band gap than that of bulk silicon. The surface band bending in the Si/oxide interface is responsible for this energy gap reduction.

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Room-temperature electroluminescence from electron-hole plasmas in the metal-oxide-silicon tunneling diodes

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