Room-temperature electroluminescence from electron-hole plasmas in the metal-oxide-silicon tunneling diodes

C. W. Liu*, M. H. Lee, Miin Jang Chen, I. C. Lin, Ching Fuh Lin

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

91 引文 斯高帕斯(Scopus)

摘要

An electron-hole plasma recombination model is used to fit the room-temperature electroluminescence from metal-oxide-silicon tunneling diodes. The relatively narrow line shape in the emission spectra can be understood by the quasi-Fermi level positions of electrans and holes, which both lie in the band gap. This model also gives a narrower band gap than that of bulk silicon. The surface band bending in the Si/oxide interface is responsible for this energy gap reduction.

原文英語
頁(從 - 到)1516-1518
頁數3
期刊Applied Physics Letters
76
發行號12
DOIs
出版狀態已發佈 - 2000 三月 20
對外發佈

ASJC Scopus subject areas

  • 物理與天文學(雜項)

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