Room temperature electrical spin injection in remanence

S. Hövel; N. C. Gerhardt; M. R. Hofmann; F. Y. Lo; A. Ludwig; D. Reuter; A. D. Wieck; E. Schuster; H. Wende; W. Keune; O. Petracic; K. Westerholt

doi:10.1063/1.2957469

Room temperature electrical spin injection in remanence

S. Hövel^*
, N. C. Gerhardt
, M. R. Hofmann
, F. Y. Lo
, A. Ludwig
, D. Reuter
, A. D. Wieck
, E. Schuster
, H. Wende
, W. Keune
, O. Petracic
, K. Westerholt

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

59 引文斯高帕斯（Scopus）

摘要

We demonstrate electrical spin injection from ferromagnetic Fe/Tb multilayer structures with remanent perpendicular magnetization into GaAs-based light-emitting diodes at room temperature. Using a reverse-biased Schottky contact and a MgO tunnel contact, respectively, we achieve spin injection at remanence. The maximum degree of circular polarization of the emitted light is 3% at room temperature.

原文	英語
文章編號	021117
期刊	Applied Physics Letters
卷	93
發行號	2
DOIs	https://doi.org/10.1063/1.2957469
出版狀態	已發佈 - 2008 7月 14
對外發佈	是

ASJC Scopus subject areas

物理與天文學（雜項）

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10.1063/1.2957469

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abstract = "We demonstrate electrical spin injection from ferromagnetic Fe/Tb multilayer structures with remanent perpendicular magnetization into GaAs-based light-emitting diodes at room temperature. Using a reverse-biased Schottky contact and a MgO tunnel contact, respectively, we achieve spin injection at remanence. The maximum degree of circular polarization of the emitted light is 3\% at room temperature.",

author = "S. H{\"o}vel and Gerhardt, \{N. C.\} and Hofmann, \{M. R.\} and Lo, \{F. Y.\} and A. Ludwig and D. Reuter and Wieck, \{A. D.\} and E. Schuster and H. Wende and W. Keune and O. Petracic and K. Westerholt",

note = "Funding Information: This work was supported by the Deutsche Forschungsgemeinschaft within the Sonderforschungsbereich 491.",

year = "2008",

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doi = "10.1063/1.2957469",

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AU - Hövel, S.

AU - Gerhardt, N. C.

AU - Hofmann, M. R.

AU - Lo, F. Y.

AU - Ludwig, A.

AU - Reuter, D.

AU - Wieck, A. D.

AU - Schuster, E.

AU - Wende, H.

AU - Keune, W.

AU - Petracic, O.

AU - Westerholt, K.

N1 - Funding Information: This work was supported by the Deutsche Forschungsgemeinschaft within the Sonderforschungsbereich 491.

PY - 2008/7/14

Y1 - 2008/7/14

N2 - We demonstrate electrical spin injection from ferromagnetic Fe/Tb multilayer structures with remanent perpendicular magnetization into GaAs-based light-emitting diodes at room temperature. Using a reverse-biased Schottky contact and a MgO tunnel contact, respectively, we achieve spin injection at remanence. The maximum degree of circular polarization of the emitted light is 3% at room temperature.

AB - We demonstrate electrical spin injection from ferromagnetic Fe/Tb multilayer structures with remanent perpendicular magnetization into GaAs-based light-emitting diodes at room temperature. Using a reverse-biased Schottky contact and a MgO tunnel contact, respectively, we achieve spin injection at remanence. The maximum degree of circular polarization of the emitted light is 3% at room temperature.

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DO - 10.1063/1.2957469

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SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 021117

ER -

Room temperature electrical spin injection in remanence

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