Room temperature electrical spin injection in remanence

S. Hövel; N. C. Gerhardt; M. R. Hofmann; Fang-Yuh Lo; A. Ludwig; D. Reuter; A. D. Wieck; E. Schuster; H. Wende; W. Keune; O. Petracic; K. Westerholt

doi:10.1063/1.2957469

Room temperature electrical spin injection in remanence

S. Hövel, N. C. Gerhardt, M. R. Hofmann, Fang-Yuh Lo, A. Ludwig, D. Reuter, A. D. Wieck, E. Schuster, H. Wende, W. Keune, O. Petracic, K. Westerholt

物理學系

研究成果: 雜誌貢獻 › 文章 › 同行評審

47 引文斯高帕斯（Scopus）

摘要

We demonstrate electrical spin injection from ferromagnetic Fe/Tb multilayer structures with remanent perpendicular magnetization into GaAs-based light-emitting diodes at room temperature. Using a reverse-biased Schottky contact and a MgO tunnel contact, respectively, we achieve spin injection at remanence. The maximum degree of circular polarization of the emitted light is 3% at room temperature.

原文	英語
文章編號	021117
期刊	Applied Physics Letters
卷	93
發行號	2
DOIs	https://doi.org/10.1063/1.2957469
出版狀態	已發佈 - 2008 七月 14

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2957469

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AU - Reuter, D.

AU - Wieck, A. D.

AU - Schuster, E.

AU - Wende, H.

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AU - Petracic, O.

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