摘要
We demonstrate electrical spin injection from ferromagnetic Fe/Tb multilayer structures with remanent perpendicular magnetization into GaAs-based light-emitting diodes at room temperature. Using a reverse-biased Schottky contact and a MgO tunnel contact, respectively, we achieve spin injection at remanence. The maximum degree of circular polarization of the emitted light is 3% at room temperature.
原文 | 英語 |
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文章編號 | 021117 |
期刊 | Applied Physics Letters |
卷 | 93 |
發行號 | 2 |
DOIs | |
出版狀態 | 已發佈 - 2008 七月 14 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)