Room temperature electrical spin injection in remanence

S. Hövel, N. C. Gerhardt, M. R. Hofmann, Fang-Yuh Lo, A. Ludwig, D. Reuter, A. D. Wieck, E. Schuster, H. Wende, W. Keune, O. Petracic, K. Westerholt

研究成果: 雜誌貢獻文章同行評審

47 引文 斯高帕斯(Scopus)

摘要

We demonstrate electrical spin injection from ferromagnetic Fe/Tb multilayer structures with remanent perpendicular magnetization into GaAs-based light-emitting diodes at room temperature. Using a reverse-biased Schottky contact and a MgO tunnel contact, respectively, we achieve spin injection at remanence. The maximum degree of circular polarization of the emitted light is 3% at room temperature.

原文英語
文章編號021117
期刊Applied Physics Letters
93
發行號2
DOIs
出版狀態已發佈 - 2008 七月 14

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

指紋 深入研究「Room temperature electrical spin injection in remanence」主題。共同形成了獨特的指紋。

引用此