Room temperature electrical spin injection in remanence

S. Hövel*, N. C. Gerhardt, M. R. Hofmann, Fang-Yuh Lo, A. Ludwig, D. Reuter, A. D. Wieck, E. Schuster, H. Wende, W. Keune, O. Petracic, K. Westerholt

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

50 引文 斯高帕斯(Scopus)

摘要

We demonstrate electrical spin injection from ferromagnetic Fe/Tb multilayer structures with remanent perpendicular magnetization into GaAs-based light-emitting diodes at room temperature. Using a reverse-biased Schottky contact and a MgO tunnel contact, respectively, we achieve spin injection at remanence. The maximum degree of circular polarization of the emitted light is 3% at room temperature.

原文英語
文章編號021117
期刊Applied Physics Letters
93
發行號2
DOIs
出版狀態已發佈 - 2008 七月 14

ASJC Scopus subject areas

  • 物理與天文學(雜項)

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