RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots

V. A. Markov, H. H. Cheng, Chih ta Chia, A. I. Nikiforov, V. A. Cherepanov, O. P. Pchelyakov, K. S. Zhuravlev, A. B. Talochkin, E. McGlynn, M. O. Henry

研究成果: 雜誌貢獻會議論文同行評審

33 引文 斯高帕斯(Scopus)

摘要

The initial stages of Ge growth on the Si(001)-(2×1) surface have been studied by using a RHEED pattern zero-streak profile analysis technique. Thicknesses for {105} and {113} facets formation, corresponding to the nucleation of coherent `hut'-clusters and dislocated `dome' three-dimensional (3D) islands respectively, were determined in a growth temperature range of about 200-600 °C. Multilayer structures containing ultra-small Ge quantum dots (QDs) with a plane size of about 10 nm and a height of 1.5 nm have been studied by photoluminescence (PL). PL bands assigned to QDs show an intensity comparable to data in the literature, but a band width five times smaller.

原文英語
頁(從 - 到)79-83
頁數5
期刊Thin Solid Films
369
發行號1
DOIs
出版狀態已發佈 - 2000 七月 3
事件The International Joint Conference on Silicon Epitaxyand Heterostructures (IJC-SI) - Miyagi, Jpn
持續時間: 1999 九月 121999 九月 17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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