摘要
An efficient and effective method to achieve high responsivity and specific detectivity, particularly for normal-incident quantum well infrared photodetectors (QWIPs), is proposed in this study. By combining superlattice (SL) structure, grating structures, and graphene monolayer onto traditional QWIP designs, a graphene-covered multicolor quantum grid infrared photodetector (QGIP) with improved optoelectrical properties is developed. The enhancements of the device’s responsivity and specific detectivity are about 7-fold and 20-fold, respectively, which resulted from an increase in the charge depletion region and the generation of extra photoelectrons due to graphene-semiconductor heterojunction. This method provides a potential candidate for future high-performance photodetectors.
| 原文 | 英語 |
|---|---|
| 頁(從 - 到) | 2456-2465 |
| 頁數 | 10 |
| 期刊 | Optics Express |
| 卷 | 28 |
| 發行號 | 2 |
| DOIs | |
| 出版狀態 | 已發佈 - 2020 1月 20 |
ASJC Scopus subject areas
- 原子與分子物理與光學
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