Resonant tunneling through discrete quantum states in stacked atomic-layered MoS2

Linh Nam Nguyen, Yann Wen Lan*, Jyun Hong Chen, Tay Rong Chang, Yuan Liang Zhong, Horng Tay Jeng, Lain Jong Li, Chii Dong Chen

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

30 引文 斯高帕斯(Scopus)

摘要

Two-dimensional crystals can be assembled into three-dimensional stacks with atomic layer precision, which have already shown plenty of fascinating physical phenomena and been used for prototype vertical-field-effect- transistors.1,2 In this work, interlayer electron tunneling in stacked high-quality crystalline MoS2 films were investigated. A trilayered MoS2 film was sandwiched between top and bottom electrodes with an adjacent bottom gate, and the discrete energy levels in each layer could be tuned by bias and gate voltages. When the discrete energy levels aligned, a resonant tunneling peak appeared in the current-voltage characteristics. The peak position shifts linearly with perpendicular magnetic field, indicating formation of Landau levels. From this linear dependence, the effective mass and Fermi velocity are determined and are confirmed by electronic structure calculations. These fundamental parameters are useful for exploitation of its unique properties.

原文英語
頁(從 - 到)2381-2386
頁數6
期刊Nano Letters
14
發行號5
DOIs
出版狀態已發佈 - 2014 五月 14
對外發佈

ASJC Scopus subject areas

  • 生物工程
  • 化學 (全部)
  • 材料科學(全部)
  • 凝聚態物理學
  • 機械工業

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