Residual strain analysis of InxGa1- xAs/GaAs heteroepitaxial layers

V. Krishnamoorthy*, Y. W. Lin, L. Calhoun, H. L. Liu, R. M. Park

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

42 引文 斯高帕斯(Scopus)

摘要

InxGa1-xAs/GaAs heteroepitaxial layers, having various compositions and thicknesses, have been analyzed using the high resolution x-ray diffraction technique which has revealed that the residual strain in the epilayers is strongly dependent on both the epilayer composition as well as thickness. However, published theoretical models concerning residual strain in InxGa1-xAs/GaAs epilayers suggest that the extent of relaxation is independent of epilayer composition. In this letter, we present an empirical model based on our findings which can be used to accurately predict the extent of lattice relaxation in InxGa 1-xAs/GaAs epilayers which includes the influence of epilayer composition.

原文英語
頁(從 - 到)2680-2682
頁數3
期刊Applied Physics Letters
61
發行號22
DOIs
出版狀態已發佈 - 1992
對外發佈

ASJC Scopus subject areas

  • 物理與天文學(雜項)

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