Reliable doping technique for WSe2 by W:Ta co-sputtering process

Po Yen Chien; Ming Zhang; Shao Chia Huang; Min Hung Lee; Hung Ru Hsu; Yen Teng Ho; Yung Ching Chu; Chao An Jong; Jason Woo

doi:10.1109/SNW.2016.7577984

Reliable doping technique for WSe₂ by W:Ta co-sputtering process

Po Yen Chien, Ming Zhang, Shao Chia Huang, Min Hung Lee, Hung Ru Hsu, Yen Teng Ho, Yung Ching Chu, Chao An Jong, Jason Woo

光電工程學士學位學程

研究成果: 書貢獻/報告類型 › 會議論文篇章

3 引文斯高帕斯（Scopus）

摘要

The electrical and material properties of WSe₂ doped by W:Ta co-sputtering process were examined. High acceptor doping concentration (6×10¹³cm^-2) and good effective hole mobility (16.5cm²/Vs) were realized. As a result, low sheet resistance (17kΩ/sq) and contact resistance with Pd metal (11.4kΩ-μm) were measured using TLM structures.

原文	英語
主出版物標題	2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	58-59
頁數	2
ISBN（電子）	9781509007264
DOIs	https://doi.org/10.1109/SNW.2016.7577984
出版狀態	已發佈 - 2016 9月 27
事件	21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, 美国持續時間: 2016 6月 12 → 2016 6月 13

出版系列

名字	2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

會議

會議	21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
國家/地區	美国
城市	Honolulu
期間	2016/06/12 → 2016/06/13

ASJC Scopus subject areas

硬體和架構
電氣與電子工程
電子、光磁材料

存取文件

10.1109/SNW.2016.7577984

其它文件與鏈接

引用此

Chien, P. Y., Zhang, M., Huang, S. C., Lee, M. H., Hsu, H. R., Ho, Y. T., Chu, Y. C., Jong, C. A., & Woo, J. (2016). Reliable doping technique for WSe₂ by W:Ta co-sputtering process. 於 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 (頁 58-59). 文章 7577984 (2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW.2016.7577984

Chien, PY, Zhang, M, Huang, SC, Lee, MH, Hsu, HR, Ho, YT, Chu, YC, Jong, CA & Woo, J 2016, Reliable doping technique for WSe₂ by W:Ta co-sputtering process. 於 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016., 7577984, 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016, Institute of Electrical and Electronics Engineers Inc., 頁 58-59, 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016, Honolulu, 美国, 2016/06/12. https://doi.org/10.1109/SNW.2016.7577984

@inproceedings{16bf9e3d4e6947368d6e40c87354d730,

title = "Reliable doping technique for WSe2 by W:Ta co-sputtering process",

abstract = "The electrical and material properties of WSe2 doped by W:Ta co-sputtering process were examined. High acceptor doping concentration (6×1013cm-2) and good effective hole mobility (16.5cm2/Vs) were realized. As a result, low sheet resistance (17kΩ/sq) and contact resistance with Pd metal (11.4kΩ-μm) were measured using TLM structures.",

author = "Chien, {Po Yen} and Ming Zhang and Huang, {Shao Chia} and Lee, {Min Hung} and Hsu, {Hung Ru} and Ho, {Yen Teng} and Chu, {Yung Ching} and Jong, {Chao An} and Jason Woo",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 ; Conference date: 12-06-2016 Through 13-06-2016",

year = "2016",

month = sep,

day = "27",

doi = "10.1109/SNW.2016.7577984",

language = "English",

series = "2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "58--59",

booktitle = "2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016",

}

TY - GEN

T1 - Reliable doping technique for WSe2 by W:Ta co-sputtering process

AU - Chien, Po Yen

AU - Zhang, Ming

AU - Huang, Shao Chia

AU - Lee, Min Hung

AU - Hsu, Hung Ru

AU - Ho, Yen Teng

AU - Chu, Yung Ching

AU - Jong, Chao An

AU - Woo, Jason

PY - 2016/9/27

Y1 - 2016/9/27

N2 - The electrical and material properties of WSe2 doped by W:Ta co-sputtering process were examined. High acceptor doping concentration (6×1013cm-2) and good effective hole mobility (16.5cm2/Vs) were realized. As a result, low sheet resistance (17kΩ/sq) and contact resistance with Pd metal (11.4kΩ-μm) were measured using TLM structures.

AB - The electrical and material properties of WSe2 doped by W:Ta co-sputtering process were examined. High acceptor doping concentration (6×1013cm-2) and good effective hole mobility (16.5cm2/Vs) were realized. As a result, low sheet resistance (17kΩ/sq) and contact resistance with Pd metal (11.4kΩ-μm) were measured using TLM structures.

UR - http://www.scopus.com/inward/record.url?scp=84994756589&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84994756589&partnerID=8YFLogxK

U2 - 10.1109/SNW.2016.7577984

DO - 10.1109/SNW.2016.7577984

M3 - Conference contribution

AN - SCOPUS:84994756589

T3 - 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

SP - 58

EP - 59

BT - 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016

Y2 - 12 June 2016 through 13 June 2016

ER -