Reliable doping technique for WSe2 by W:Ta co-sputtering process

Po Yen Chien, Ming Zhang, Shao Chia Huang, Min Hung Lee, Hung Ru Hsu, Yen Teng Ho, Yung Ching Chu, Chao An Jong, Jason Woo

    研究成果: 書貢獻/報告類型會議論文篇章

    3 引文 斯高帕斯(Scopus)

    摘要

    The electrical and material properties of WSe2 doped by W:Ta co-sputtering process were examined. High acceptor doping concentration (6×1013cm-2) and good effective hole mobility (16.5cm2/Vs) were realized. As a result, low sheet resistance (17kΩ/sq) and contact resistance with Pd metal (11.4kΩ-μm) were measured using TLM structures.

    原文英語
    主出版物標題2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
    發行者Institute of Electrical and Electronics Engineers Inc.
    頁面58-59
    頁數2
    ISBN(電子)9781509007264
    DOIs
    出版狀態已發佈 - 2016 九月 27
    事件21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, 美国
    持續時間: 2016 六月 122016 六月 13

    出版系列

    名字2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

    會議

    會議21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
    國家/地區美国
    城市Honolulu
    期間2016/06/122016/06/13

    ASJC Scopus subject areas

    • 硬體和架構
    • 電氣與電子工程
    • 電子、光磁材料

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