Reliable doping technique for WSe2 by W:Ta co-sputtering process

Po Yen Chien, Ming Zhang, Shao Chia Huang, Min Hung Lee, Hung Ru Hsu, Yen Teng Ho, Yung Ching Chu, Chao An Jong, Jason Woo

研究成果: 書貢獻/報告類型會議貢獻

1 引文 斯高帕斯(Scopus)

摘要

The electrical and material properties of WSe2 doped by W:Ta co-sputtering process were examined. High acceptor doping concentration (6×1013cm-2) and good effective hole mobility (16.5cm2/Vs) were realized. As a result, low sheet resistance (17kΩ/sq) and contact resistance with Pd metal (11.4kΩ-μm) were measured using TLM structures.

原文英語
主出版物標題2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
發行者Institute of Electrical and Electronics Engineers Inc.
頁面58-59
頁數2
ISBN(電子)9781509007264
DOIs
出版狀態已發佈 - 2016 九月 27
事件21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, 美国
持續時間: 2016 六月 122016 六月 13

出版系列

名字2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

會議

會議21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
國家美国
城市Honolulu
期間16/6/1216/6/13

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Chien, P. Y., Zhang, M., Huang, S. C., Lee, M. H., Hsu, H. R., Ho, Y. T., Chu, Y. C., Jong, C. A., & Woo, J. (2016). Reliable doping technique for WSe2 by W:Ta co-sputtering process. 於 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 (頁 58-59). [7577984] (2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW.2016.7577984