Reliability scaling limit of 14-Å oxynitride gate dielectrics by different processing treatments

Tung Ming Pan*, Chuan-Hsi Liu

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

Various ultrathin oxynitride gate dielectrics of similar thickness (∼ 1.4 nm) processed by a rapid thermal NO-nitrided oxide (RTNO), a remote plasma nitrided oxide (RPN), a remote plasma nitridation of N2O oxide with rapid thermal NO annealing (N2O + RPN + NO), and a rapid thermal reoxidation of remote plasma nitrided oxide (ReoxRPN) are reported for the first time as a means to extend the reliability scaling limit of SiO 2/oxynitride-based gate dielectrics. The N2O + RPN + NO gate dielectric films show superior interface properties, significantly reduced leakage current, and improved reliability compared to other gate dielectrics fabricated by different processes.

原文英語
期刊Journal of the Electrochemical Society
152
發行號11
DOIs
出版狀態已發佈 - 2005 十二月 2

ASJC Scopus subject areas

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 凝聚態物理學
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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