Reliability of ambipolar switching poly-Si diodes for cross-point memory applications

M. H. Lee, C. Y. Kao, C. L. Yang, Y. S. Chen, H. Y. Lee, F. Chen, M. J. Tsai

研究成果: 書貢獻/報告類型會議論文篇章

8 引文 斯高帕斯(Scopus)

摘要

Cross-point memory framework provides high capacity, low power consumption, and low cost in nonvolatile-memory (NVM) technology [1,2]. Resistive cross-point memory structure is one of the potential candidates with scaling down beyond the flash memory [3]. In order to increase density for cross-point architecture, the vertical diode is integrated for the controller (Fig. 1) without planar MOSFET or BJT. The metal oxide diode has been reported on the switching devices with high leakage current [4]. The p/n diode has higher ON-current and uni-polar operation for PCM (Phase Change Memory) [5,6], which is compatible with IC process. The characteristic of bipolar programming in RRAM makes the requirement of bi-directional turn-ON behavior for the switching driving device [7]. In this work, the poly-Si n/p/n diode with ambipolar operation for RRAM applications and the stress reliability for programming will be demonstrated.

原文英語
主出版物標題69th Device Research Conference, DRC 2011 - Conference Digest
頁面89-90
頁數2
DOIs
出版狀態已發佈 - 2011
事件69th Device Research Conference, DRC 2011 - Santa Barbara, CA, 美国
持續時間: 2011 六月 202011 六月 22

出版系列

名字Device Research Conference - Conference Digest, DRC
ISSN(列印)1548-3770

其他

其他69th Device Research Conference, DRC 2011
國家/地區美国
城市Santa Barbara, CA
期間2011/06/202011/06/22

ASJC Scopus subject areas

  • 電氣與電子工程

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