Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72 nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics

Chuan Hsi Liu; Hung Wen Hsu; Hung Wen Chen; Pi Chun Juan; Mu Chun Wang; Chin Po Cheng; Heng Sheng Huang

doi:10.1016/j.mee.2011.04.009

Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72 nm equivalent-oxide-thickness LaO/HfO₂ stacked gate dielectrics

Chuan Hsi Liu^*, Hung Wen Hsu, Hung Wen Chen, Pi Chun Juan, Mu Chun Wang, Chin Po Cheng, Heng Sheng Huang

^*此作品的通信作者

機電工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

La-incorporated HfO₂ could improve the thermal stability and interface trap quality. Laminated structures with different doping positions and thicknesses were fabricated by RF magnetron co-sputtering method. The physical and electrical properties of HfO₂/HfLaO/p-Si and HfLaO/HfO ₂/p-Si structures after 850 °C postannealing were analyzed. And the time dependent dielectric breakdown (TDDB) characteristics were also analyzed for metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposited (ALD) HfLaO gate dielectrics. For TDDB characteristics, the Weibull slopes were independent of stress voltages and capacitor areas, but they were dependent on the stress temperatures. The electric-field acceleration parameter (γ) is about 4.3-4.5 MV/cm. The maximum voltage (V_g) for 10-year TDDB lifetime under 85 °C operation is V_g = 2.03 V, or equivalently 6.1 MV/cm.

原文	英語
頁（從 - 到）	15-18
頁數	4
期刊	Microelectronic Engineering
卷	89
發行號	1
DOIs	https://doi.org/10.1016/j.mee.2011.04.009
出版狀態	已發佈 - 2012 1月

ASJC Scopus subject areas

電子、光磁材料
原子與分子物理與光學
凝聚態物理學
表面、塗料和薄膜
電氣與電子工程

存取文件

10.1016/j.mee.2011.04.009

其它文件與鏈接

引用此

@article{efad94373cb24326bcad4020acc27004,

title = "Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72 nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics",

abstract = "La-incorporated HfO2 could improve the thermal stability and interface trap quality. Laminated structures with different doping positions and thicknesses were fabricated by RF magnetron co-sputtering method. The physical and electrical properties of HfO2/HfLaO/p-Si and HfLaO/HfO 2/p-Si structures after 850 °C postannealing were analyzed. And the time dependent dielectric breakdown (TDDB) characteristics were also analyzed for metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposited (ALD) HfLaO gate dielectrics. For TDDB characteristics, the Weibull slopes were independent of stress voltages and capacitor areas, but they were dependent on the stress temperatures. The electric-field acceleration parameter (γ) is about 4.3-4.5 MV/cm. The maximum voltage (Vg) for 10-year TDDB lifetime under 85 °C operation is Vg = 2.03 V, or equivalently 6.1 MV/cm.",

keywords = "High-k dielectric, La-incorporated HfO, TDDB reliability",

author = "Liu, {Chuan Hsi} and Hsu, {Hung Wen} and Chen, {Hung Wen} and Juan, {Pi Chun} and Wang, {Mu Chun} and Cheng, {Chin Po} and Huang, {Heng Sheng}",

year = "2012",

month = jan,

doi = "10.1016/j.mee.2011.04.009",

language = "English",

volume = "89",

pages = "15--18",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72 nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics

AU - Liu, Chuan Hsi

AU - Hsu, Hung Wen

AU - Chen, Hung Wen

AU - Juan, Pi Chun

AU - Wang, Mu Chun

AU - Cheng, Chin Po

AU - Huang, Heng Sheng

PY - 2012/1

Y1 - 2012/1

N2 - La-incorporated HfO2 could improve the thermal stability and interface trap quality. Laminated structures with different doping positions and thicknesses were fabricated by RF magnetron co-sputtering method. The physical and electrical properties of HfO2/HfLaO/p-Si and HfLaO/HfO 2/p-Si structures after 850 °C postannealing were analyzed. And the time dependent dielectric breakdown (TDDB) characteristics were also analyzed for metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposited (ALD) HfLaO gate dielectrics. For TDDB characteristics, the Weibull slopes were independent of stress voltages and capacitor areas, but they were dependent on the stress temperatures. The electric-field acceleration parameter (γ) is about 4.3-4.5 MV/cm. The maximum voltage (Vg) for 10-year TDDB lifetime under 85 °C operation is Vg = 2.03 V, or equivalently 6.1 MV/cm.

AB - La-incorporated HfO2 could improve the thermal stability and interface trap quality. Laminated structures with different doping positions and thicknesses were fabricated by RF magnetron co-sputtering method. The physical and electrical properties of HfO2/HfLaO/p-Si and HfLaO/HfO 2/p-Si structures after 850 °C postannealing were analyzed. And the time dependent dielectric breakdown (TDDB) characteristics were also analyzed for metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposited (ALD) HfLaO gate dielectrics. For TDDB characteristics, the Weibull slopes were independent of stress voltages and capacitor areas, but they were dependent on the stress temperatures. The electric-field acceleration parameter (γ) is about 4.3-4.5 MV/cm. The maximum voltage (Vg) for 10-year TDDB lifetime under 85 °C operation is Vg = 2.03 V, or equivalently 6.1 MV/cm.

KW - High-k dielectric

KW - La-incorporated HfO

KW - TDDB reliability

UR - http://www.scopus.com/inward/record.url?scp=81855166964&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=81855166964&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2011.04.009

DO - 10.1016/j.mee.2011.04.009

M3 - Article

AN - SCOPUS:81855166964

SN - 0167-9317

VL - 89

SP - 15

EP - 18

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1

ER -

Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72 nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此

Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72 nm equivalent-oxide-thickness LaO/HfO₂ stacked gate dielectrics