Reduction in the efficiency-droop effect of ingan green light-emitting diodes using gradual quantum wells

Ya Ju Lee, Chih Hao Chen, Chia Jung Lee

研究成果: 雜誌貢獻文章

39 引文 (Scopus)

摘要

The effect of gradual indium gallium nitride (InGaN) quantum wells (QWs) on the suppression of efficiency-droop in green light-emitting diodes (LEDs) is numerically investigated. The presented scheme increases the internal quantum efficiency by 45.5% at I=20 mA and 55.7% at I=100 mA, indicating a considerable reduction of efficiency-droop. This improvement is attributable mainly to the use of the gradual InGaN QW's structure that significantly alleviates band bending in the valence band, improving the transport efficiency of injected holes above that of conventional LEDs. The radiative recombination is thus enhanced as the overlap between electron and hole wave functions is increased. Most importantly, the leakage of injected electrons to p-type region is correspondingly reduced, in turn suppressing the efficiency-droop in the LED.

原文英語
文章編號5546907
頁(從 - 到)1506-1508
頁數3
期刊IEEE Photonics Technology Letters
22
發行號20
DOIs
出版狀態已發佈 - 2010 十月 11

指紋

Semiconductor quantum wells
Light emitting diodes
Gallium nitride
Indium
light emitting diodes
quantum wells
gallium nitrides
indium
Electrons
Wave functions
Valence bands
Quantum efficiency
radiative recombination
quantum efficiency
leakage
electrons
retarding
wave functions
valence
gallium nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

引用此文

Reduction in the efficiency-droop effect of ingan green light-emitting diodes using gradual quantum wells. / Lee, Ya Ju; Chen, Chih Hao; Lee, Chia Jung.

於: IEEE Photonics Technology Letters, 卷 22, 編號 20, 5546907, 11.10.2010, p. 1506-1508.

研究成果: 雜誌貢獻文章

@article{d72ce11e39ec4566b1f1a3e350455f20,
title = "Reduction in the efficiency-droop effect of ingan green light-emitting diodes using gradual quantum wells",
abstract = "The effect of gradual indium gallium nitride (InGaN) quantum wells (QWs) on the suppression of efficiency-droop in green light-emitting diodes (LEDs) is numerically investigated. The presented scheme increases the internal quantum efficiency by 45.5{\%} at I=20 mA and 55.7{\%} at I=100 mA, indicating a considerable reduction of efficiency-droop. This improvement is attributable mainly to the use of the gradual InGaN QW's structure that significantly alleviates band bending in the valence band, improving the transport efficiency of injected holes above that of conventional LEDs. The radiative recombination is thus enhanced as the overlap between electron and hole wave functions is increased. Most importantly, the leakage of injected electrons to p-type region is correspondingly reduced, in turn suppressing the efficiency-droop in the LED.",
keywords = "Efficiency droop, InGaN, light-emitting diode (LED)",
author = "Lee, {Ya Ju} and Chen, {Chih Hao} and Lee, {Chia Jung}",
year = "2010",
month = "10",
day = "11",
doi = "10.1109/LPT.2010.2065221",
language = "English",
volume = "22",
pages = "1506--1508",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "20",

}

TY - JOUR

T1 - Reduction in the efficiency-droop effect of ingan green light-emitting diodes using gradual quantum wells

AU - Lee, Ya Ju

AU - Chen, Chih Hao

AU - Lee, Chia Jung

PY - 2010/10/11

Y1 - 2010/10/11

N2 - The effect of gradual indium gallium nitride (InGaN) quantum wells (QWs) on the suppression of efficiency-droop in green light-emitting diodes (LEDs) is numerically investigated. The presented scheme increases the internal quantum efficiency by 45.5% at I=20 mA and 55.7% at I=100 mA, indicating a considerable reduction of efficiency-droop. This improvement is attributable mainly to the use of the gradual InGaN QW's structure that significantly alleviates band bending in the valence band, improving the transport efficiency of injected holes above that of conventional LEDs. The radiative recombination is thus enhanced as the overlap between electron and hole wave functions is increased. Most importantly, the leakage of injected electrons to p-type region is correspondingly reduced, in turn suppressing the efficiency-droop in the LED.

AB - The effect of gradual indium gallium nitride (InGaN) quantum wells (QWs) on the suppression of efficiency-droop in green light-emitting diodes (LEDs) is numerically investigated. The presented scheme increases the internal quantum efficiency by 45.5% at I=20 mA and 55.7% at I=100 mA, indicating a considerable reduction of efficiency-droop. This improvement is attributable mainly to the use of the gradual InGaN QW's structure that significantly alleviates band bending in the valence band, improving the transport efficiency of injected holes above that of conventional LEDs. The radiative recombination is thus enhanced as the overlap between electron and hole wave functions is increased. Most importantly, the leakage of injected electrons to p-type region is correspondingly reduced, in turn suppressing the efficiency-droop in the LED.

KW - Efficiency droop

KW - InGaN

KW - light-emitting diode (LED)

UR - http://www.scopus.com/inward/record.url?scp=77957604749&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957604749&partnerID=8YFLogxK

U2 - 10.1109/LPT.2010.2065221

DO - 10.1109/LPT.2010.2065221

M3 - Article

AN - SCOPUS:77957604749

VL - 22

SP - 1506

EP - 1508

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 20

M1 - 5546907

ER -