Reduction in the efficiency-droop effect of ingan green light-emitting diodes using gradual quantum wells

Ya Ju Lee, Chih Hao Chen, Chia Jung Lee

    研究成果: 雜誌貢獻文章同行評審

    44 引文 斯高帕斯(Scopus)

    摘要

    The effect of gradual indium gallium nitride (InGaN) quantum wells (QWs) on the suppression of efficiency-droop in green light-emitting diodes (LEDs) is numerically investigated. The presented scheme increases the internal quantum efficiency by 45.5% at I=20 mA and 55.7% at I=100 mA, indicating a considerable reduction of efficiency-droop. This improvement is attributable mainly to the use of the gradual InGaN QW's structure that significantly alleviates band bending in the valence band, improving the transport efficiency of injected holes above that of conventional LEDs. The radiative recombination is thus enhanced as the overlap between electron and hole wave functions is increased. Most importantly, the leakage of injected electrons to p-type region is correspondingly reduced, in turn suppressing the efficiency-droop in the LED.

    原文英語
    文章編號5546907
    頁(從 - 到)1506-1508
    頁數3
    期刊IEEE Photonics Technology Letters
    22
    發行號20
    DOIs
    出版狀態已發佈 - 2010 十月 11

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Electrical and Electronic Engineering

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