Reduced hole injection barrier for achieving ultralow voltage polymer space-charge-limited transistor with a high on/off current ratio

Yu Chiang Chao; Yi Cheng Lin; Min Zhi Dai; Hsiao Wen Zan; Hsin Fei Meng

doi:10.1063/1.3261749

Reduced hole injection barrier for achieving ultralow voltage polymer space-charge-limited transistor with a high on/off current ratio

Yu Chiang Chao, Yi Cheng Lin, Min Zhi Dai, Hsiao Wen Zan^*, Hsin Fei Meng

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

19 引文斯高帕斯（Scopus）

摘要

Vertical polymer space-charge limited transistor (SCLT) operated with an ultralow voltage is demonstrated. The influence of aging effect of the oxygen plasma treated indium tin oxide electrode on the hole injection barrier and on the transistor characteristics is investigated. By reducing the hole injection barrier, the on/off ratio as high as 10⁴ is obtained at a collector to emitter voltage as low as -0.84 V. The low operation voltage is crucial to the development of low-power large-area polymer transistor array. Inverter characteristics are also demonstrated by connecting a SCLT with a load resistor.

原文	英語
文章編號	203305
期刊	Applied Physics Letters
卷	95
發行號	20
DOIs	https://doi.org/10.1063/1.3261749
出版狀態	已發佈 - 2009
對外發佈	是

ASJC Scopus subject areas

物理與天文學（雜項）

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title = "Reduced hole injection barrier for achieving ultralow voltage polymer space-charge-limited transistor with a high on/off current ratio",

abstract = "Vertical polymer space-charge limited transistor (SCLT) operated with an ultralow voltage is demonstrated. The influence of aging effect of the oxygen plasma treated indium tin oxide electrode on the hole injection barrier and on the transistor characteristics is investigated. By reducing the hole injection barrier, the on/off ratio as high as 104 is obtained at a collector to emitter voltage as low as -0.84 V. The low operation voltage is crucial to the development of low-power large-area polymer transistor array. Inverter characteristics are also demonstrated by connecting a SCLT with a load resistor.",

author = "Chao, {Yu Chiang} and Lin, {Yi Cheng} and Dai, {Min Zhi} and Zan, {Hsiao Wen} and Meng, {Hsin Fei}",

note = "Funding Information: This work is supported by the National Science Council of Taiwan under Contract No. NSC97-2628-M-009-016.",

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T1 - Reduced hole injection barrier for achieving ultralow voltage polymer space-charge-limited transistor with a high on/off current ratio

AU - Chao, Yu Chiang

AU - Lin, Yi Cheng

AU - Dai, Min Zhi

AU - Zan, Hsiao Wen

AU - Meng, Hsin Fei

N1 - Funding Information: This work is supported by the National Science Council of Taiwan under Contract No. NSC97-2628-M-009-016.

PY - 2009

Y1 - 2009

N2 - Vertical polymer space-charge limited transistor (SCLT) operated with an ultralow voltage is demonstrated. The influence of aging effect of the oxygen plasma treated indium tin oxide electrode on the hole injection barrier and on the transistor characteristics is investigated. By reducing the hole injection barrier, the on/off ratio as high as 104 is obtained at a collector to emitter voltage as low as -0.84 V. The low operation voltage is crucial to the development of low-power large-area polymer transistor array. Inverter characteristics are also demonstrated by connecting a SCLT with a load resistor.

AB - Vertical polymer space-charge limited transistor (SCLT) operated with an ultralow voltage is demonstrated. The influence of aging effect of the oxygen plasma treated indium tin oxide electrode on the hole injection barrier and on the transistor characteristics is investigated. By reducing the hole injection barrier, the on/off ratio as high as 104 is obtained at a collector to emitter voltage as low as -0.84 V. The low operation voltage is crucial to the development of low-power large-area polymer transistor array. Inverter characteristics are also demonstrated by connecting a SCLT with a load resistor.

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Reduced hole injection barrier for achieving ultralow voltage polymer space-charge-limited transistor with a high on/off current ratio

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