The rapid thermal annealing effects on thin Pt/Y2O3/Si MOS capacitors have been investigated. After post-metallization annealing at 425 °C in 30 s, the Pt/Y2O3/Si capacitor shows a sharp capacitance-voltage swing of a low oxide charge density ∼7.7 × 1010 cm-2 and a minimum interface state density ∼3.6 × 1010 cm-2eV-1. The depth-profiling X-ray photoelectron spectra show the annihilation of O-H bonding, and stabilization of Y-O bonding in the Y2O3 layer by thermal annealing. However, at the interface, a transition silicate layer of Si-Y-O-H bonding is persistent.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry