Random telegraph signal and spin characteristics of the gate-all-around poly-silicon nanowire

Tsung Han Lee, Yan Ting Li, Shu-Fen Hu

研究成果: 雜誌貢獻文章

1 引文 斯高帕斯(Scopus)

摘要

An arsenic (As)-doped poly-silicon nanowire gate-all-around transistor fabricated using standard semiconductor methods was used to measure the Coulomb blockade effect by applying a tunable gate voltage. Two-level trapping states due to the random telegraph signal of fluctuating drain current were observed in the silicon transport channel. Under high magnetic fields, the superposition points of differential conductance revealed weak 2-electron singlet-triplet splitting states of the arsenic magnetic impurity. The weak spin-orbital coupling suggests that the electron-spin-polarization in the As-doped silicon nanowire and the two-level trapping state coexisted in the Coulomb blockade oscillations. These characteristics indicate that a few arsenic donors strongly affect the quantum behavior of the poly-silicon material.

原文英語
文章編號174508
期刊Journal of Applied Physics
116
發行號17
DOIs
出版狀態已發佈 - 2014 一月 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

指紋 深入研究「Random telegraph signal and spin characteristics of the gate-all-around poly-silicon nanowire」主題。共同形成了獨特的指紋。

  • 引用此