摘要
Device dimension scaling down to be comparable to the domain size of polycrystalline ferroelectric HfZrO2 (HZO) is evaluated for subthreshold swing (SS) and drain-induced barrier lowering (DIBL) by numerical simulation. The proposed multi-domain modeling involves polarization random location in HZO and probability with Gaussian distribution, as well as being integrated with the Landau-Khalatnikov equation. A small device with a few domains exhibits steep SS compared with large dimension with many domains. The N-DIBL (negative-DIBL) is also estimated by using this model, and the negative capacitance effect retards the short-channel effects significantly. The trend of the experimental data and simulation results of fin field-effect transistors and planar field-effect transistors is consistent with nano-scale and micro-scale devices, respectively.
原文 | 英語 |
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文章編號 | 125011 |
期刊 | Semiconductor Science and Technology |
卷 | 35 |
發行號 | 12 |
DOIs | |
出版狀態 | 已發佈 - 2020 10月 |
ASJC Scopus subject areas
- 電子、光磁材料
- 凝聚態物理學
- 電氣與電子工程
- 材料化學