Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO2

K. T. Chen, C. Y. Liao, K. Y. Hsiang, S. H. Chang, F. J. Hsieh, H. Liang, S. H. Chiang, J. H. Liu, K. S. Li, S. T. Chang, M. H. Lee*

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

摘要

Device dimension scaling down to be comparable to the domain size of polycrystalline ferroelectric HfZrO2 (HZO) is evaluated for subthreshold swing (SS) and drain-induced barrier lowering (DIBL) by numerical simulation. The proposed multi-domain modeling involves polarization random location in HZO and probability with Gaussian distribution, as well as being integrated with the Landau-Khalatnikov equation. A small device with a few domains exhibits steep SS compared with large dimension with many domains. The N-DIBL (negative-DIBL) is also estimated by using this model, and the negative capacitance effect retards the short-channel effects significantly. The trend of the experimental data and simulation results of fin field-effect transistors and planar field-effect transistors is consistent with nano-scale and micro-scale devices, respectively.

原文英語
文章編號125011
期刊Semiconductor Science and Technology
35
發行號12
DOIs
出版狀態已發佈 - 2020 十月

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

指紋

深入研究「Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO<sub>2</sub>」主題。共同形成了獨特的指紋。

引用此