Raman study of Si-Ge intermixing in Ge quantum rings and dots

V. I. Mashanov, H. H. Cheng, C. T. Chia, Y. H. Chang

研究成果: 雜誌貢獻文章同行評審

11 引文 斯高帕斯(Scopus)

摘要

The Ge/Si (1 0 0) nanostructures have been studied by atomic force microscopy (AFM) and Micro Raman optical spectroscopy. Two layers of Ge of total thickness 0.75 nm and Si cap with thickness 2.5 nm were deposited by the method of molecular beam epitaxy at the temperature range 640-700°C. AFM shows both quantum dots and ring-shape Ge nanostructures. From the analysis of the intensity and energy shift of the Raman signal we have found that the average concentration of Ge decreases considerably from 44% to 27%, when the growth temperature increases, whereas the degree of strain relaxation remains roughly the same. This allows us to conclude that intermixing is a dominating mechanism for strain relaxation in processes of transformation of Ge quantum dots to quantum rings.

原文英語
頁(從 - 到)531-536
頁數6
期刊Physica E: Low-Dimensional Systems and Nanostructures
28
發行號4
DOIs
出版狀態已發佈 - 2005 九月

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

指紋 深入研究「Raman study of Si-Ge intermixing in Ge quantum rings and dots」主題。共同形成了獨特的指紋。

引用此