Raman spectroscopy of self-assembled Ge islands on Si

T. R. Yang*, M. M. Dvoynenko, Z. C. Feng, H. H. Cheng

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

7 引文 斯高帕斯(Scopus)

摘要

We present a Raman scattering study for self-organized Ge dots on Si substrate. By means of difference Raman spectroscopy technique, we have separated the Raman signals from the Ge islands and Si substrate. The wetting layer thickness and strain were estimated from the line width and peak frequency. The estimated wetting layer thickness values are comparative with the Ge dot height obtained from microscopy measurements. The strain is decreased with an increase of the thickness.

原文英語
頁(從 - 到)41-45
頁數5
期刊European Physical Journal B
31
發行號1
DOIs
出版狀態已發佈 - 2003

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學

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