Raman spectroscopy of self-assembled Ge islands on Si

T. R. Yang, M. M. Dvoynenko, Z. C. Feng, H. H. Cheng

研究成果: 雜誌貢獻文章

7 引文 斯高帕斯(Scopus)

摘要

We present a Raman scattering study for self-organized Ge dots on Si substrate. By means of difference Raman spectroscopy technique, we have separated the Raman signals from the Ge islands and Si substrate. The wetting layer thickness and strain were estimated from the line width and peak frequency. The estimated wetting layer thickness values are comparative with the Ge dot height obtained from microscopy measurements. The strain is decreased with an increase of the thickness.

原文英語
頁(從 - 到)41-45
頁數5
期刊European Physical Journal B
31
發行號1
DOIs
出版狀態已發佈 - 2003 十二月 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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