A Raman scattering study for self-organized Ge dots on Si substrate is presented. Raman signals from the Ge islands and Si substrate have been separated, by means of difference Raman spectroscopy technique. The wetting layer thickness and strain were estimated from the line width and the position of the peak. The estimated wetting layer thickness values are comparative with the Ge dot height obtained from microscopy measurements. As explained, the strain is observed to decrease with an increase of the Ge island height and the wetting layer thickness.
|頁（從 - 到）||67-72|
|期刊||Materials Research Society Symposium - Proceedings|
|出版狀態||已發佈 - 2002|
|事件||Quantum Confined Semiconductor Nanostructures - Boston MA, 美国|
持續時間: 2002 12月 2 → 2002 12月 5
ASJC Scopus subject areas