Radiation damage and surface modification of InSb(111) by MeV C⁺ and C₂⁺ ions

The damage accumulation at the surface as well as deeper regions in InSb bombarded with MeV C⁺ and C₂⁺ ions have been studied. Mirror polished (111)-oriented InSb single crystal substrates were implanted with 1.00 MeV C⁺ and 2.00 MeV C₂⁺ ions to a total fluence of 5×10¹⁴ C-atoms/cm² at room temperature. The retained damage following implantation was analyzed by Rutherford backscattering/channeling technique and Raman scattering experiment. Fourier Transform Infrared Spectroscopy (FTIR) have been used to study the dielectric behavior, optical as well as transport properties of the implanted specimens. The FTIR spectra were analyzed within the framework of a dielectric response model. The surface structure of the implanted wafers has been measured by atomic force microscopy. The results show that the response of InSb crystal to C⁺ ion bombardment is widely different when compared to that of C₂⁺ implantation. A tentative explanation for the results have been presented.