The damage accumulation at the surface as well as deeper regions in InSb bombarded with MeV C+ and C2+ ions have been studied. Mirror polished (111)-oriented InSb single crystal substrates were implanted with 1.00 MeV C+ and 2.00 MeV C2+ ions to a total fluence of 5×1014 C-atoms/cm2 at room temperature. The retained damage following implantation was analyzed by Rutherford backscattering/channeling technique and Raman scattering experiment. Fourier Transform Infrared Spectroscopy (FTIR) have been used to study the dielectric behavior, optical as well as transport properties of the implanted specimens. The FTIR spectra were analyzed within the framework of a dielectric response model. The surface structure of the implanted wafers has been measured by atomic force microscopy. The results show that the response of InSb crystal to C+ ion bombardment is widely different when compared to that of C2+ implantation. A tentative explanation for the results have been presented.
|頁（從 - 到）||672-679|
|期刊||Proceedings of SPIE - The International Society for Optical Engineering|
|出版狀態||已發佈 - 2000|
|事件||Optoelectronic Materials and Devices II - Taipei, Taiwan|
持續時間: 2000 7月 26 → 2000 7月 28
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