Radiation damage and surface modification of InSb(111) by MeV C+ and C2+ ions

G. Kuri*, T. R. Yang

*此作品的通信作者

研究成果: 雜誌貢獻會議論文同行評審

摘要

The damage accumulation at the surface as well as deeper regions in InSb bombarded with MeV C+ and C2+ ions have been studied. Mirror polished (111)-oriented InSb single crystal substrates were implanted with 1.00 MeV C+ and 2.00 MeV C2+ ions to a total fluence of 5×1014 C-atoms/cm2 at room temperature. The retained damage following implantation was analyzed by Rutherford backscattering/channeling technique and Raman scattering experiment. Fourier Transform Infrared Spectroscopy (FTIR) have been used to study the dielectric behavior, optical as well as transport properties of the implanted specimens. The FTIR spectra were analyzed within the framework of a dielectric response model. The surface structure of the implanted wafers has been measured by atomic force microscopy. The results show that the response of InSb crystal to C+ ion bombardment is widely different when compared to that of C2+ implantation. A tentative explanation for the results have been presented.

原文英語
頁(從 - 到)672-679
頁數8
期刊Proceedings of SPIE - The International Society for Optical Engineering
4078
DOIs
出版狀態已發佈 - 2000 一月 1
事件Optoelectronic Materials and Devices II - Taipei, Taiwan
持續時間: 2000 七月 262000 七月 28

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

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