Proximity effect of electron beam lithography for single-electron transistor fabrication

Shu Fen Hu*, Chin Lung Sung, Kuo Dong Huang, Yue Min Wan


研究成果: 雜誌貢獻期刊論文同行評審

5 引文 斯高帕斯(Scopus)


In this letter, we shall describe a method, utilizing the proximity effect in electron beam lithography, suitable for fabricating silicon dots and devices, and demonstrate the electronic characteristics of the Si single-electron transistor. The drain current (Id) of the device oscillates against gate voltage. The electrical characteristics of the single-electron transistor were observed to be consistent with the expected behavior of electron transport through gated quantum dots, at up to 150 K. The dependence of the electrical characteristics on the dot size reveals that the Id oscillation follows from the Coulomb blockade by poly-Si grains in the poly-Si dot. The method of fabrication of this device is completely compatible with complementary metal-oxide-semiconductor technology, raising the possibility of manufacturing large-scale integrated nanoelectronic systems.

頁(從 - 到)3893-3895
期刊Applied Physics Letters
出版狀態已發佈 - 2004 十月 25

ASJC Scopus subject areas

  • 物理與天文學(雜項)


深入研究「Proximity effect of electron beam lithography for single-electron transistor fabrication」主題。共同形成了獨特的指紋。