Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SSfor=42mV/dec, SSrev=28mV/dec, switch-off <0.2V, and hysteresis-free strategies

M. H. Lee, P. G. Chen, C. Liu, K. Y. Chu, C. C. Cheng, M. J. Xie, S. N. Liu, J. W. Lee, S. J. Huang, M. H. Liao, M. Tang, K. S. Li, M. C. Chen

研究成果: 書貢獻/報告類型會議論文篇章

89 引文 斯高帕斯(Scopus)

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Material Science