Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SSfor=42mV/dec, SSrev=28mV/dec, switch-off <0.2V, and hysteresis-free strategies

M. H. Lee, P. G. Chen, C. Liu, K. Y. Chu, C. C. Cheng, M. J. Xie, S. N. Liu, J. W. Lee, S. J. Huang, M. H. Liao, M. Tang, K. S. Li, M. C. Chen

研究成果: 書貢獻/報告類型會議論文篇章

75 引文 斯高帕斯(Scopus)

摘要

Ferroelectric HfZrOx (FE-HZO) FETs is experimentally demonstrated with 0.98nm CET (capacitance equivalent thickness), small hysteresis window VT (threshold voltage) shift < 0.1V, SSfor = 42mV/dec, SSrev = 28mV/dec, and switch-off < 0.2V. The optimum ALD process leads single monolayer SiOx for IL (interfacial layer) and low gate leakage current. The FE-HZO FETs is operated at room temperature and 150K to obtain beyond the physical limitation of Boltzmann tyranny, and the extracted body factors are m = 0.67 and m = 0.89 for Vds = 0.1 and 0.5 V, respectively, to confirm the negative capacitance (NC) effect. There are two proposed strategies to reach hysteresis-free, including FE-HZO/epi-Ge/Si FETs with experimentally VT shift 3mV in hysteresis window, and 3nm-thick FE-HZO resulting hysteresis-free and sub-0.2V switching by numerical simulation.

原文英語
主出版物標題2015 IEEE International Electron Devices Meeting, IEDM 2015
發行者Institute of Electrical and Electronics Engineers Inc.
頁面22.5.1-22.5.4
ISBN(電子)9781467398930
DOIs
出版狀態已發佈 - 2015 2月 16
事件61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, 美国
持續時間: 2015 12月 72015 12月 9

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2016-February
ISSN(列印)0163-1918

其他

其他61st IEEE International Electron Devices Meeting, IEDM 2015
國家/地區美国
城市Washington
期間2015/12/072015/12/09

ASJC Scopus subject areas

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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