Progress and challenges in p-type oxide-based thin film transistors

Zong Wei Shang, Hsiao Hsuan Hsu, Zhi Wei Zheng, Chun Hu Cheng

研究成果: 雜誌貢獻文章同行評審

3 引文 斯高帕斯(Scopus)

摘要

Transparent electronics has attracted much attention and been widely studied for next-generation high-performance flat-panel display application in the past few years, because of its excellent electrical properties. In display application, thin film transistors (TFTs) play an important role as the basic units by controlling the pixels. Among them, oxide-based TFTs have become promising candidates and gradually replaced the conventional amorphous and polycrystalline silicon TFTs, due to high mobility, good transparency, excellent uniformity and low processing temperature. Even though n-type oxide TFTs have shown high device performance and been used in commercial display application, p-type oxide TFTs with the equal performance have been rarely reported. Hence, in this paper, recent progress and challenges in p-type oxide-based TFTs are reviewed. After a short introduction, the TFT device structure and operation are presented. Then, recent developments in p-type oxide TFTs are discussed in detail, with the emphasis on the potential p-type oxide candidates as copper oxide, tin oxide and nickel oxide. Moreover, miscellaneous applications of p-type oxide TFTs are also presented. Despite this, the performance of p-type oxide TFTs still lags behind, as compared with that of n-type counterparts. Thus, the current issues and challenges of p-type oxide TFTs are briefly discussed.

原文英語
頁(從 - 到)422-443
頁數22
期刊Nanotechnology Reviews
8
發行號1
DOIs
出版狀態已發佈 - 2019 一月 1

ASJC Scopus subject areas

  • Biotechnology
  • Medicine (miscellaneous)
  • Materials Science (miscellaneous)
  • Energy Engineering and Power Technology
  • Engineering (miscellaneous)
  • Process Chemistry and Technology

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