Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy

T. S. Lay; K. H. Huang; W. H. Hung; M. Hong; J. Kwo; J. P. Mannaerts

doi:10.1016/S0038-1101(01)00049-1

Probing the microscopic compositions at Ga₂O₃(Gd₂O₃)/GaAs interface by core level photoelectron spectroscopy

T. S. Lay^*
, K. H. Huang
, W. H. Hung
, M. Hong
, J. Kwo
, J. P. Mannaerts

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

11 引文斯高帕斯（Scopus）

摘要

The depth profile of high resolution photoelectron spectra at Ga₂O₃(Gd₂O₃)/GaAs and Ga₂O₃/GaAs interfaces have been obtained by using synchrotron radiation beam and low energy Ar⁺ sputtering. Only one intermediary Ga oxidation state at binding energy ∼20.3 eV has been observed in the Ga₂O₃(Gd₂O₃)/GaAs sample. The data suggest that the presence of Gd stabilizes the Ga³⁺ oxidation state and leads to the excellent electrical insulating property of the Ga₂O₃(Gd₂O₃) film.

原文	英語
頁（從 - 到）	423-426
頁數	4
期刊	Solid-State Electronics
卷	45
發行號	3
DOIs	https://doi.org/10.1016/S0038-1101(01)00049-1
出版狀態	已發佈 - 2001 3月
對外發佈	是

ASJC Scopus subject areas

電子、光磁材料
凝聚態物理學
材料化學
電氣與電子工程

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10.1016/S0038-1101(01)00049-1

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引用此

@article{c77e61d94e4c421e844ea91acbb6e6a6,

title = "Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy",

abstract = "The depth profile of high resolution photoelectron spectra at Ga2O3(Gd2O3)/GaAs and Ga2O3/GaAs interfaces have been obtained by using synchrotron radiation beam and low energy Ar+ sputtering. Only one intermediary Ga oxidation state at binding energy ∼20.3 eV has been observed in the Ga2O3(Gd2O3)/GaAs sample. The data suggest that the presence of Gd stabilizes the Ga3+ oxidation state and leads to the excellent electrical insulating property of the Ga2O3(Gd2O3) film.",

keywords = "Depth profile, GaAs passivation, GaO(GdO), Photoelectron spectroscopy",

author = "Lay, \{T. S.\} and Huang, \{K. H.\} and Hung, \{W. H.\} and M. Hong and J. Kwo and Mannaerts, \{J. P.\}",

note = "Funding Information: TSL would like to thank the support from the National Science Council of Taiwan through funding grants NSC-89-2218-E-110-023 and the Synchrotron Radiation Research Center, Hsinchu, Taiwan. ",

year = "2001",

month = mar,

doi = "10.1016/S0038-1101(01)00049-1",

language = "English",

volume = "45",

pages = "423--426",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "3",

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TY - JOUR

T1 - Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy

AU - Lay, T. S.

AU - Huang, K. H.

AU - Hung, W. H.

AU - Hong, M.

AU - Kwo, J.

AU - Mannaerts, J. P.

N1 - Funding Information: TSL would like to thank the support from the National Science Council of Taiwan through funding grants NSC-89-2218-E-110-023 and the Synchrotron Radiation Research Center, Hsinchu, Taiwan.

PY - 2001/3

Y1 - 2001/3

N2 - The depth profile of high resolution photoelectron spectra at Ga2O3(Gd2O3)/GaAs and Ga2O3/GaAs interfaces have been obtained by using synchrotron radiation beam and low energy Ar+ sputtering. Only one intermediary Ga oxidation state at binding energy ∼20.3 eV has been observed in the Ga2O3(Gd2O3)/GaAs sample. The data suggest that the presence of Gd stabilizes the Ga3+ oxidation state and leads to the excellent electrical insulating property of the Ga2O3(Gd2O3) film.

AB - The depth profile of high resolution photoelectron spectra at Ga2O3(Gd2O3)/GaAs and Ga2O3/GaAs interfaces have been obtained by using synchrotron radiation beam and low energy Ar+ sputtering. Only one intermediary Ga oxidation state at binding energy ∼20.3 eV has been observed in the Ga2O3(Gd2O3)/GaAs sample. The data suggest that the presence of Gd stabilizes the Ga3+ oxidation state and leads to the excellent electrical insulating property of the Ga2O3(Gd2O3) film.

KW - Depth profile

KW - GaAs passivation

KW - GaO(GdO)

KW - Photoelectron spectroscopy

UR - https://www.scopus.com/pages/publications/0035275930

UR - https://www.scopus.com/pages/publications/0035275930#tab=citedBy

U2 - 10.1016/S0038-1101(01)00049-1

DO - 10.1016/S0038-1101(01)00049-1

M3 - Article

AN - SCOPUS:0035275930

SN - 0038-1101

VL - 45

SP - 423

EP - 426

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 3

ER -

Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此

Probing the microscopic compositions at Ga₂O₃(Gd₂O₃)/GaAs interface by core level photoelectron spectroscopy