@article{c77e61d94e4c421e844ea91acbb6e6a6,
title = "Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy",
abstract = "The depth profile of high resolution photoelectron spectra at Ga2O3(Gd2O3)/GaAs and Ga2O3/GaAs interfaces have been obtained by using synchrotron radiation beam and low energy Ar+ sputtering. Only one intermediary Ga oxidation state at binding energy ∼20.3 eV has been observed in the Ga2O3(Gd2O3)/GaAs sample. The data suggest that the presence of Gd stabilizes the Ga3+ oxidation state and leads to the excellent electrical insulating property of the Ga2O3(Gd2O3) film.",
keywords = "Depth profile, GaAs passivation, GaO(GdO), Photoelectron spectroscopy",
author = "Lay, {T. S.} and Huang, {K. H.} and Hung, {W. H.} and M. Hong and J. Kwo and Mannaerts, {J. P.}",
note = "Funding Information: TSL would like to thank the support from the National Science Council of Taiwan through funding grants NSC-89-2218-E-110-023 and the Synchrotron Radiation Research Center, Hsinchu, Taiwan. ",
year = "2001",
month = mar,
doi = "10.1016/S0038-1101(01)00049-1",
language = "English",
volume = "45",
pages = "423--426",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "3",
}