Probing moving charge distribution of biaxial and CESL strained PMOSFETs with body effect

Mu Chun Wang; Jing Zong Jhang; Shea Jue Wang; Hsin Chia Yang; Wen Shiang Liao; Ming Feng Lu; Guo Wei Wu; Chuan Hsi Liu

doi:10.1109/ISNE.2013.6512371

Probing moving charge distribution of biaxial and CESL strained PMOSFETs with body effect

Mu Chun Wang, Jing Zong Jhang, Shea Jue Wang^*, Hsin Chia Yang, Wen Shiang Liao, Ming Feng Lu, Guo Wei Wu, Chuan Hsi Liu

^*此作品的通信作者

機電工程學系

研究成果: 會議貢獻類型 › 會議論文 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

Using body effect to probe the inversion charge distribution is a feasible method in qualitative analysis, especially for sandwich embedded SiGe structure in nano-node semiconductor strained engineering. In this study, there were three tested (100) wafers with non-strained, compressive strained and tensile strained types. After analysis, no matter what the compressive or the tensile was, the inversion current flow for PMOSFETs mainly located in biaxial strained SiGe channel due to N-well bias. The related electrical characterizations with well biases were also exhibited.

原文	英語
頁面	375-378
頁數	4
DOIs	https://doi.org/10.1109/ISNE.2013.6512371
出版狀態	已發佈 - 2013
事件	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, 臺灣持續時間: 2013 2月 25 → 2013 2月 26

其他

其他	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
國家/地區	臺灣
城市	Kaohsiung
期間	2013/02/25 → 2013/02/26

ASJC Scopus subject areas

電氣與電子工程

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10.1109/ISNE.2013.6512371

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title = "Probing moving charge distribution of biaxial and CESL strained PMOSFETs with body effect",

abstract = "Using body effect to probe the inversion charge distribution is a feasible method in qualitative analysis, especially for sandwich embedded SiGe structure in nano-node semiconductor strained engineering. In this study, there were three tested (100) wafers with non-strained, compressive strained and tensile strained types. After analysis, no matter what the compressive or the tensile was, the inversion current flow for PMOSFETs mainly located in biaxial strained SiGe channel due to N-well bias. The related electrical characterizations with well biases were also exhibited.",

keywords = "CESL, Si-capping layer, biaxial strain, body effect",

author = "Wang, {Mu Chun} and Jhang, {Jing Zong} and Wang, {Shea Jue} and Yang, {Hsin Chia} and Liao, {Wen Shiang} and Lu, {Ming Feng} and Wu, {Guo Wei} and Liu, {Chuan Hsi}",

year = "2013",

doi = "10.1109/ISNE.2013.6512371",

language = "English",

pages = "375--378",

note = "2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 ; Conference date: 25-02-2013 Through 26-02-2013",

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TY - CONF

T1 - Probing moving charge distribution of biaxial and CESL strained PMOSFETs with body effect

AU - Wang, Mu Chun

AU - Jhang, Jing Zong

AU - Wang, Shea Jue

AU - Yang, Hsin Chia

AU - Liao, Wen Shiang

AU - Lu, Ming Feng

AU - Wu, Guo Wei

AU - Liu, Chuan Hsi

PY - 2013

Y1 - 2013

N2 - Using body effect to probe the inversion charge distribution is a feasible method in qualitative analysis, especially for sandwich embedded SiGe structure in nano-node semiconductor strained engineering. In this study, there were three tested (100) wafers with non-strained, compressive strained and tensile strained types. After analysis, no matter what the compressive or the tensile was, the inversion current flow for PMOSFETs mainly located in biaxial strained SiGe channel due to N-well bias. The related electrical characterizations with well biases were also exhibited.

AB - Using body effect to probe the inversion charge distribution is a feasible method in qualitative analysis, especially for sandwich embedded SiGe structure in nano-node semiconductor strained engineering. In this study, there were three tested (100) wafers with non-strained, compressive strained and tensile strained types. After analysis, no matter what the compressive or the tensile was, the inversion current flow for PMOSFETs mainly located in biaxial strained SiGe channel due to N-well bias. The related electrical characterizations with well biases were also exhibited.

KW - CESL

KW - Si-capping layer

KW - biaxial strain

KW - body effect

UR - http://www.scopus.com/inward/record.url?scp=84877982440&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84877982440&partnerID=8YFLogxK

U2 - 10.1109/ISNE.2013.6512371

DO - 10.1109/ISNE.2013.6512371

M3 - Paper

AN - SCOPUS:84877982440

SP - 375

EP - 378

T2 - 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013

Y2 - 25 February 2013 through 26 February 2013

ER -

Probing moving charge distribution of biaxial and CESL strained PMOSFETs with body effect

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