Probing moving charge distribution of biaxial and CESL strained PMOSFETs with body effect

Mu Chun Wang, Jing Zong Jhang, Shea Jue Wang, Hsin Chia Yang, Wen Shiang Liao, Ming Feng Lu, Guo Wei Wu, Chuan Hsi Liu

研究成果: 書貢獻/報告類型會議貢獻

摘要

Using body effect to probe the inversion charge distribution is a feasible method in qualitative analysis, especially for sandwich embedded SiGe structure in nano-node semiconductor strained engineering. In this study, there were three tested (100) wafers with non-strained, compressive strained and tensile strained types. After analysis, no matter what the compressive or the tensile was, the inversion current flow for PMOSFETs mainly located in biaxial strained SiGe channel due to N-well bias. The related electrical characterizations with well biases were also exhibited.

原文英語
主出版物標題ISNE 2013 - IEEE International Symposium on Next-Generation Electronics 2013
頁面375-378
頁數4
DOIs
出版狀態已發佈 - 2013 五月 27
事件2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, 臺灣
持續時間: 2013 二月 252013 二月 26

其他

其他2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
國家臺灣
城市Kaohsiung
期間13/2/2513/2/26

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • 引用此

    Wang, M. C., Jhang, J. Z., Wang, S. J., Yang, H. C., Liao, W. S., Lu, M. F., Wu, G. W., & Liu, C. H. (2013). Probing moving charge distribution of biaxial and CESL strained PMOSFETs with body effect. 於 ISNE 2013 - IEEE International Symposium on Next-Generation Electronics 2013 (頁 375-378). [6512371] https://doi.org/10.1109/ISNE.2013.6512371