Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy
F. M. Hsiao, M. Schnedler, V. Portz, Y. C. Huang, B. C. Huang, M. C. Shih, C. W. Chang, L. W. Tu, H. Eisele, R. E. Dunin-Borkowski, Ph Ebert, Y. P. Chiu
研究成果: 雜誌貢獻 › 文章 › 同行評審
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斯高帕斯(Scopus)