Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy

F. M. Hsiao, M. Schnedler, V. Portz, Y. C. Huang, B. C. Huang, M. C. Shih, C. W. Chang, L. W. Tu, H. Eisele, R. E. Dunin-Borkowski, Ph Ebert, Y. P. Chiu

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Physics & Astronomy