Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

Po Hsun Ho; Chun Hsiang Chen; Fu Yu Shih; Yih Ren Chang; Shao Sian Li; Wei Hua Wang; Min Chuan Shih; Wei Ting Chen; Ya Ping Chiu; Min Ken Li; Yi Siang Shih; Chun Wei Chen

doi:10.1002/adma.201503592

Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

Po Hsun Ho
, Chun Hsiang Chen
, Fu Yu Shih
, Yih Ren Chang
, Shao Sian Li
, Wei Hua Wang
, Min Chuan Shih
, Wei Ting Chen
, Ya Ping Chiu^*
, Min Ken Li
, Yi Siang Shih
, Chun Wei Chen

^*此作品的通信作者

物理學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

42 引文斯高帕斯（Scopus）

摘要

Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiO_x heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiO_x heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.

原文	英語
頁（從 - 到）	7809-7815
頁數	7
期刊	Advanced Materials
卷	27
發行號	47
DOIs	https://doi.org/10.1002/adma.201503592
出版狀態	已發佈 - 2015 12月 16

ASJC Scopus subject areas

一般材料科學
材料力學
機械工業

存取文件

10.1002/adma.201503592

其它文件與鏈接

引用此

@article{fd8976fc88be4877baeb5a6f33249ac2,

title = "Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer",

abstract = "Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.",

keywords = "band gap opening, charge transfer, graphene heterostructures, ultrastrong photoinduced doping",

author = "Ho, \{Po Hsun\} and Chen, \{Chun Hsiang\} and Shih, \{Fu Yu\} and Chang, \{Yih Ren\} and Li, \{Shao Sian\} and Wang, \{Wei Hua\} and Shih, \{Min Chuan\} and Chen, \{Wei Ting\} and Chiu, \{Ya Ping\} and Li, \{Min Ken\} and Shih, \{Yi Siang\} and Chen, \{Chun Wei\}",

note = "Publisher Copyright: {\textcopyright} 2015 Wiley-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

year = "2015",

month = dec,

day = "16",

doi = "10.1002/adma.201503592",

language = "English",

volume = "27",

pages = "7809--7815",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "47",

}

TY - JOUR

T1 - Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

AU - Ho, Po Hsun

AU - Chen, Chun Hsiang

AU - Shih, Fu Yu

AU - Chang, Yih Ren

AU - Li, Shao Sian

AU - Wang, Wei Hua

AU - Shih, Min Chuan

AU - Chen, Wei Ting

AU - Chiu, Ya Ping

AU - Li, Min Ken

AU - Shih, Yi Siang

AU - Chen, Chun Wei

PY - 2015/12/16

Y1 - 2015/12/16

N2 - Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.

AB - Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.

KW - band gap opening

KW - charge transfer

KW - graphene heterostructures

KW - ultrastrong photoinduced doping

UR - https://www.scopus.com/pages/publications/84954357392

UR - https://www.scopus.com/pages/publications/84954357392#tab=citedBy

U2 - 10.1002/adma.201503592

DO - 10.1002/adma.201503592

M3 - Article

AN - SCOPUS:84954357392

SN - 0935-9648

VL - 27

SP - 7809

EP - 7815

JO - Advanced Materials

JF - Advanced Materials

IS - 47

ER -

Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

摘要

ASJC Scopus subject areas

存取文件

其它文件與鏈接

指紋

引用此