Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

Po Hsun Ho, Chun Hsiang Chen, Fu Yu Shih, Yih Ren Chang, Shao Sian Li, Wei Hua Wang, Min Chuan Shih, Wei Ting Chen, Ya Ping Chiu*, Min Ken Li, Yi Siang Shih, Chun Wei Chen

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

31 引文 斯高帕斯(Scopus)

摘要

Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.

原文英語
頁(從 - 到)7809-7815
頁數7
期刊Advanced Materials
27
發行號47
DOIs
出版狀態已發佈 - 2015 十二月 16

ASJC Scopus subject areas

  • 材料科學(全部)
  • 材料力學
  • 機械工業

指紋

深入研究「Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer」主題。共同形成了獨特的指紋。

引用此