Polymer space-charge-limited transistor as a solid-state vacuum tube triode

Yu Chiang Chao; Ming Che Ku; Wu Wei Tsai; Hsiao Wen Zan; Hsin Fei Meng; Hung Kuo Tsai; Sheng Fu Horng

doi:10.1063/1.3513334

Polymer space-charge-limited transistor as a solid-state vacuum tube triode

Yu Chiang Chao
, Ming Che Ku
, Wu Wei Tsai
, Hsiao Wen Zan^*
, Hsin Fei Meng
, Hung Kuo Tsai
, Sheng Fu Horng

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

30 引文斯高帕斯（Scopus）

摘要

We report the construction of a polymer space-charge-limited transistor (SCLT), a solid-state version of vacuum tube triode. The SCLT achieves a high on/off ratio of 3× 10⁵ at a low operation voltage of 1.5 V by using high quality insulators both above and below the grid base electrode. Applying a greater bias to the base increases the barrier potential, and turns off the channel current, without introducing a large parasitic leakage current. Simulation result verifies the influence of base bias on channel potential distribution. The output current density is 1.7 mA/ cm² with current gain greater than 1000.

原文	英語
文章編號	223307
期刊	Applied Physics Letters
卷	97
發行號	22
DOIs	https://doi.org/10.1063/1.3513334
出版狀態	已發佈 - 2010 11月 29
對外發佈	是

ASJC Scopus subject areas

物理與天文學（雜項）

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10.1063/1.3513334

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abstract = "We report the construction of a polymer space-charge-limited transistor (SCLT), a solid-state version of vacuum tube triode. The SCLT achieves a high on/off ratio of 3× 105 at a low operation voltage of 1.5 V by using high quality insulators both above and below the grid base electrode. Applying a greater bias to the base increases the barrier potential, and turns off the channel current, without introducing a large parasitic leakage current. Simulation result verifies the influence of base bias on channel potential distribution. The output current density is 1.7 mA/ cm2 with current gain greater than 1000.",

author = "Chao, \{Yu Chiang\} and Ku, \{Ming Che\} and Tsai, \{Wu Wei\} and Zan, \{Hsiao Wen\} and Meng, \{Hsin Fei\} and Tsai, \{Hung Kuo\} and Horng, \{Sheng Fu\}",

note = "Funding Information: This work was supported by the National Science Council of Taiwan under Contract No. NSC98-2628-M-009-001.",

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AU - Chao, Yu Chiang

AU - Ku, Ming Che

AU - Tsai, Wu Wei

AU - Zan, Hsiao Wen

AU - Meng, Hsin Fei

AU - Tsai, Hung Kuo

AU - Horng, Sheng Fu

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PY - 2010/11/29

Y1 - 2010/11/29

N2 - We report the construction of a polymer space-charge-limited transistor (SCLT), a solid-state version of vacuum tube triode. The SCLT achieves a high on/off ratio of 3× 105 at a low operation voltage of 1.5 V by using high quality insulators both above and below the grid base electrode. Applying a greater bias to the base increases the barrier potential, and turns off the channel current, without introducing a large parasitic leakage current. Simulation result verifies the influence of base bias on channel potential distribution. The output current density is 1.7 mA/ cm2 with current gain greater than 1000.

AB - We report the construction of a polymer space-charge-limited transistor (SCLT), a solid-state version of vacuum tube triode. The SCLT achieves a high on/off ratio of 3× 105 at a low operation voltage of 1.5 V by using high quality insulators both above and below the grid base electrode. Applying a greater bias to the base increases the barrier potential, and turns off the channel current, without introducing a large parasitic leakage current. Simulation result verifies the influence of base bias on channel potential distribution. The output current density is 1.7 mA/ cm2 with current gain greater than 1000.

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ER -

Polymer space-charge-limited transistor as a solid-state vacuum tube triode

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