摘要
By utilizing poly(3-hexylthiophene) (P3HT) polymer nanowires with diameters of ∼15 nm as the vertical channel material, a polymer nanowire vertical transistor has been demonstrated for the first time. The P3HT nanowires were characterized by absorption spectroscopy and scanning electron microscopy. A saturated output current was created by increasing the thickness of the polymer layers between the electrodes through several spin-coating cycles of the polymer nanowires prepared in a marginal solvent. The carrier mobility was also increased through utilization of polymer nanowires with strong interchain interactions. By introducing a small hole injection barrier between the emitter and semiconducting polymer, an on/off current ratio of 1,500 was obtained. The operating voltage is less than 2 V. [Figure not available: see fulltext.]
原文 | 英語 |
---|---|
頁(從 - 到) | 938-944 |
頁數 | 7 |
期刊 | Nano Research |
卷 | 7 |
發行號 | 6 |
DOIs | |
出版狀態 | 已發佈 - 2014 6月 |
對外發佈 | 是 |
ASJC Scopus subject areas
- 材料科學(全部)
- 電氣與電子工程