Polymer nanowire vertical transistors

Husande Li, Tzushan Chen, Yuchiang Chao

研究成果: 雜誌貢獻文章

1 引文 斯高帕斯(Scopus)

摘要

By utilizing poly(3-hexylthiophene) (P3HT) polymer nanowires with diameters of ∼15 nm as the vertical channel material, a polymer nanowire vertical transistor has been demonstrated for the first time. The P3HT nanowires were characterized by absorption spectroscopy and scanning electron microscopy. A saturated output current was created by increasing the thickness of the polymer layers between the electrodes through several spin-coating cycles of the polymer nanowires prepared in a marginal solvent. The carrier mobility was also increased through utilization of polymer nanowires with strong interchain interactions. By introducing a small hole injection barrier between the emitter and semiconducting polymer, an on/off current ratio of 1,500 was obtained. The operating voltage is less than 2 V. [Figure not available: see fulltext.]

原文英語
頁(從 - 到)938-944
頁數7
期刊Nano Research
7
發行號6
DOIs
出版狀態已發佈 - 2014 六月
對外發佈Yes

ASJC Scopus subject areas

  • Materials Science(all)
  • Electrical and Electronic Engineering

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