Polymer infrared photo-detector with high sensitivity up to 1100 nm

En Chen Chen, Shin Rong Tseng, Yu Chiang Chao, Hsin Fei Meng*, Chih Feng Wang, Wen Chang Chen, Chian Shu Hsu, Sheng Fu Horng

*此作品的通信作者

    研究成果: 雜誌貢獻期刊論文同行評審

    20 引文 斯高帕斯(Scopus)

    摘要

    We reported a low band-gap conjugated polymer, poly[2,3-bis(4-(2- ethylhexyloxy)phenyl)-5,7-di(thiophen-2-yl)thieno[3,4-b]pyrazine] (PDTTP), was studied for the near infrared (NIR) photo-detector application. PDTTP shows intense absorption in NIR wavelength (to 1000 nm) and the estimated optical and electrochemical band-gaps of PDTTP are quite small around 1.15 eV and 1.08 eV, respectively. The low band-gap and the extended long wavelength absorption originates from the introduction of alternating TP units when its parent polythieno[3,4-b]pyrazine shows excellent narrow band-gap properties. Therefore, the relatively low band-gap and intense absorption in long wavelength of PDTTP make itself a promising candidate for near-infrared photo-detector. The hole mobility of the PDTTP measured from the bottom contact field effect transistor is around 1.40 × 10-3 cm2/V s with a on/off ratio of 2100. The photo-detector based on bulk hetero-junction PDTTP and (6,6)-phenyl-C61-butyric acid methyl ester blend (PCBM) has the incident photon-to-electron conversion efficiency 28.9% at 1000 nm (-5 V) and 6.2% at 1100 nm (-5 V). This photo-detector can be operated at a high-speed of 1 MHz. The experimental result suggests the potential applications of low band-gap conjugated polymers on near-infrared photo-detectors.

    原文英語
    頁(從 - 到)1618-1622
    頁數5
    期刊Synthetic Metals
    161
    發行號15-16
    DOIs
    出版狀態已發佈 - 2011 八月 1

    ASJC Scopus subject areas

    • 電子、光磁材料
    • 凝聚態物理學
    • 材料力學
    • 機械工業
    • 金屬和合金
    • 材料化學

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