Polymer hot-carrier transistor

Yu Chiang Chao, Syuan Ling Yang, Hsin Fei Meng*, Sheng Fu Horng

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

27 引文 斯高帕斯(Scopus)

摘要

Metal-base hot-carrier transistor with conjugated polymer emitter and collector is demonstrated. The device is fabricated by multiple spin coating with the metal base sandwiched between two polymers. A thin insulating layer of LiF is inserted between the emitter and base to enhance the hot carrier kinetic energy and reduce mutual dissolution. Using poly(9-vinylcarbazole) as the emitter, Al as the base, and poly(3-hexylthiophene) as the collector, common-emitter current gain of 25 is obtained with operation voltage as low as 5 V.

原文英語
文章編號253508
頁(從 - 到)1-3
頁數3
期刊Applied Physics Letters
87
發行號25
DOIs
出版狀態已發佈 - 2005
對外發佈

ASJC Scopus subject areas

  • 物理與天文學(雜項)

指紋

深入研究「Polymer hot-carrier transistor」主題。共同形成了獨特的指紋。

引用此