Polymer hot-carrier transistor

Yu Chiang Chao; Syuan Ling Yang; Hsin Fei Meng; Sheng Fu Horng

doi:10.1063/1.2149219

Polymer hot-carrier transistor

Yu Chiang Chao, Syuan Ling Yang, Hsin Fei Meng^*, Sheng Fu Horng

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

28 引文斯高帕斯（Scopus）

摘要

Metal-base hot-carrier transistor with conjugated polymer emitter and collector is demonstrated. The device is fabricated by multiple spin coating with the metal base sandwiched between two polymers. A thin insulating layer of LiF is inserted between the emitter and base to enhance the hot carrier kinetic energy and reduce mutual dissolution. Using poly(9-vinylcarbazole) as the emitter, Al as the base, and poly(3-hexylthiophene) as the collector, common-emitter current gain of 25 is obtained with operation voltage as low as 5 V.

原文	英語
文章編號	253508
頁（從 - 到）	1-3
頁數	3
期刊	Applied Physics Letters
卷	87
發行號	25
DOIs	https://doi.org/10.1063/1.2149219
出版狀態	已發佈 - 2005
對外發佈	是

ASJC Scopus subject areas

物理與天文學（雜項）

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10.1063/1.2149219

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title = "Polymer hot-carrier transistor",

abstract = "Metal-base hot-carrier transistor with conjugated polymer emitter and collector is demonstrated. The device is fabricated by multiple spin coating with the metal base sandwiched between two polymers. A thin insulating layer of LiF is inserted between the emitter and base to enhance the hot carrier kinetic energy and reduce mutual dissolution. Using poly(9-vinylcarbazole) as the emitter, Al as the base, and poly(3-hexylthiophene) as the collector, common-emitter current gain of 25 is obtained with operation voltage as low as 5 V.",

author = "Chao, {Yu Chiang} and Yang, {Syuan Ling} and Meng, {Hsin Fei} and Horng, {Sheng Fu}",

note = "Funding Information: This work is supported by the National Science Council of the Republic of China and the Excellence Project of the ROC Ministry of Education.",

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doi = "10.1063/1.2149219",

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AU - Chao, Yu Chiang

AU - Yang, Syuan Ling

AU - Meng, Hsin Fei

AU - Horng, Sheng Fu

N1 - Funding Information: This work is supported by the National Science Council of the Republic of China and the Excellence Project of the ROC Ministry of Education.

PY - 2005

Y1 - 2005

N2 - Metal-base hot-carrier transistor with conjugated polymer emitter and collector is demonstrated. The device is fabricated by multiple spin coating with the metal base sandwiched between two polymers. A thin insulating layer of LiF is inserted between the emitter and base to enhance the hot carrier kinetic energy and reduce mutual dissolution. Using poly(9-vinylcarbazole) as the emitter, Al as the base, and poly(3-hexylthiophene) as the collector, common-emitter current gain of 25 is obtained with operation voltage as low as 5 V.

AB - Metal-base hot-carrier transistor with conjugated polymer emitter and collector is demonstrated. The device is fabricated by multiple spin coating with the metal base sandwiched between two polymers. A thin insulating layer of LiF is inserted between the emitter and base to enhance the hot carrier kinetic energy and reduce mutual dissolution. Using poly(9-vinylcarbazole) as the emitter, Al as the base, and poly(3-hexylthiophene) as the collector, common-emitter current gain of 25 is obtained with operation voltage as low as 5 V.

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Polymer hot-carrier transistor

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