Polymer hot-carrier transistor

Yu Chiang Chao, Syuan Ling Yang, Hsin Fei Meng*, Sheng Fu Horng

*此作品的通信作者

    研究成果: 雜誌貢獻期刊論文同行評審

    25 引文 斯高帕斯(Scopus)

    摘要

    Metal-base hot-carrier transistor with conjugated polymer emitter and collector is demonstrated. The device is fabricated by multiple spin coating with the metal base sandwiched between two polymers. A thin insulating layer of LiF is inserted between the emitter and base to enhance the hot carrier kinetic energy and reduce mutual dissolution. Using poly(9-vinylcarbazole) as the emitter, Al as the base, and poly(3-hexylthiophene) as the collector, common-emitter current gain of 25 is obtained with operation voltage as low as 5 V.

    原文英語
    文章編號253508
    頁(從 - 到)1-3
    頁數3
    期刊Applied Physics Letters
    87
    發行號25
    DOIs
    出版狀態已發佈 - 2005 十二月 27

    ASJC Scopus subject areas

    • 物理與天文學(雜項)

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