Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors

E. D. Grann*, S. J. Sheih, C. Chia, K. T. Tsen, O. F. Sankey, Selim E. Guncer, D. K. Ferry, G. Maracas, Ravi Droopad, A. Salvador, A. Botcharev, H. Morkoç

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

19 引文 斯高帕斯(Scopus)

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Physics & Astronomy