Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors

E. D. Grann; S. J. Sheih; C. Chia; K. T. Tsen; O. F. Sankey; Selim E. Guncer; D. K. Ferry; G. Maracas; Ravi Droopad; A. Salvador; A. Botcharev; H. Morkoç

doi:10.1063/1.110848

Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors

E. D. Grann^*
, S. J. Sheih
, C. Chia
, K. T. Tsen
, O. F. Sankey
, Selim E. Guncer
, D. K. Ferry
, G. Maracas
, Ravi Droopad
, A. Salvador
, A. Botcharev
, H. Morkoç

^*此作品的通信作者

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

21 引文斯高帕斯（Scopus）

摘要

Electron transport in GaAs-based p-i-n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≅80 K. For an injected carrier density of n≅2.2×10¹⁸ cm^-3 and electric field intensity E=25 kV/cm, the drift velocity of electrons as high as V _d=2.5×10⁷ cm/s was observed. These experimental results are in good agreement with Ensemble Monte Carlo calculations.

原文	英語
頁（從 - 到）	1230-1232
頁數	3
期刊	Applied Physics Letters
卷	64
發行號	10
DOIs	https://doi.org/10.1063/1.110848
出版狀態	已發佈 - 1994
對外發佈	是

ASJC Scopus subject areas

物理與天文學（雜項）

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10.1063/1.110848

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Grann, E. D., Sheih, S. J., Chia, C., Tsen, K. T., Sankey, O. F., Guncer, S. E., Ferry, D. K., Maracas, G., Droopad, R., Salvador, A., Botcharev, A., & Morkoç, H. (1994). Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors. Applied Physics Letters, 64(10), 1230-1232. https://doi.org/10.1063/1.110848

Grann, ED, Sheih, SJ, Chia, C, Tsen, KT, Sankey, OF, Guncer, SE, Ferry, DK, Maracas, G, Droopad, R, Salvador, A, Botcharev, A & Morkoç, H 1994, 'Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors', Applied Physics Letters, 卷 64, 編號 10, 頁 1230-1232. https://doi.org/10.1063/1.110848

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title = "Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors",

abstract = "Electron transport in GaAs-based p-i-n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≅80 K. For an injected carrier density of n≅2.2×1018 cm-3 and electric field intensity E=25 kV/cm, the drift velocity of electrons as high as V d=2.5×107 cm/s was observed. These experimental results are in good agreement with Ensemble Monte Carlo calculations.",

author = "Grann, \{E. D.\} and Sheih, \{S. J.\} and C. Chia and Tsen, \{K. T.\} and Sankey, \{O. F.\} and Guncer, \{Selim E.\} and Ferry, \{D. K.\} and G. Maracas and Ravi Droopad and A. Salvador and A. Botcharev and H. Morko{\c c}",

year = "1994",

doi = "10.1063/1.110848",

language = "English",

volume = "64",

pages = "1230--1232",

journal = "Applied Physics Letters",

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T1 - Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors

AU - Grann, E. D.

AU - Sheih, S. J.

AU - Chia, C.

AU - Tsen, K. T.

AU - Sankey, O. F.

AU - Guncer, Selim E.

AU - Ferry, D. K.

AU - Maracas, G.

AU - Droopad, Ravi

AU - Salvador, A.

AU - Botcharev, A.

AU - Morkoç, H.

PY - 1994

Y1 - 1994

N2 - Electron transport in GaAs-based p-i-n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≅80 K. For an injected carrier density of n≅2.2×1018 cm-3 and electric field intensity E=25 kV/cm, the drift velocity of electrons as high as V d=2.5×107 cm/s was observed. These experimental results are in good agreement with Ensemble Monte Carlo calculations.

AB - Electron transport in GaAs-based p-i-n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≅80 K. For an injected carrier density of n≅2.2×1018 cm-3 and electric field intensity E=25 kV/cm, the drift velocity of electrons as high as V d=2.5×107 cm/s was observed. These experimental results are in good agreement with Ensemble Monte Carlo calculations.

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SP - 1230

EP - 1232

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors

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