Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors

E. D. Grann*, S. J. Sheih, C. Chia, K. T. Tsen, O. F. Sankey, Selim E. Guncer, D. K. Ferry, G. Maracas, Ravi Droopad, A. Salvador, A. Botcharev, H. Morkoç

*此作品的通信作者

研究成果: 雜誌貢獻期刊論文同行評審

19 引文 斯高帕斯(Scopus)

摘要

Electron transport in GaAs-based p-i-n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≅80 K. For an injected carrier density of n≅2.2×1018 cm-3 and electric field intensity E=25 kV/cm, the drift velocity of electrons as high as V d=2.5×107 cm/s was observed. These experimental results are in good agreement with Ensemble Monte Carlo calculations.

原文英語
頁(從 - 到)1230-1232
頁數3
期刊Applied Physics Letters
64
發行號10
DOIs
出版狀態已發佈 - 1994
對外發佈

ASJC Scopus subject areas

  • 物理與天文學(雜項)

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