Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors

E. D. Grann, S. J. Sheih, C. Chia, K. T. Tsen, O. F. Sankey, Selim E. Guncer, D. K. Ferry, G. Maracas, Ravi Droopad, A. Salvador, A. Botcharev, H. Morkoç

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19 引文 斯高帕斯(Scopus)

摘要

Electron transport in GaAs-based p-i-n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≅80 K. For an injected carrier density of n≅2.2×1018 cm-3 and electric field intensity E=25 kV/cm, the drift velocity of electrons as high as V d=2.5×107 cm/s was observed. These experimental results are in good agreement with Ensemble Monte Carlo calculations.

原文英語
頁(從 - 到)1230-1232
頁數3
期刊Applied Physics Letters
64
發行號10
DOIs
出版狀態已發佈 - 1994 十二月 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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