@inproceedings{766e7e3cf4a54d4fb5a8f461f3f3bbb6,
title = "Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs",
abstract = "Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm, SS = 52 mV/dec, hysteresis free (threshold voltage shift = 0.8 mV), and 0.65 nm CET (capacitance equivalent thickness). The NC-FinFET modeling is validated on standard 14nm FinFET. The transient behavior of gate and drain current response are exhibited with triangular gate voltage sweep. The dynamic NC model with compact equivalent circuit for ultra-thin FE-HZO is established with experimental data validation, and estimates the fast response. A feasible concept of coupling the ultra-thin FE-HZO (1.x nm) with NC as gate stack paves a promising solution for sub-10nm technology node.",
author = "Lee, \{M. H.\} and Fan, \{S. T.\} and Tang, \{C. H.\} and Chen, \{P. G.\} and Chou, \{Y. C.\} and Chen, \{H. H.\} and Kuo, \{J. Y.\} and Xie, \{M. J.\} and Liu, \{S. N.\} and Liao, \{M. H.\} and Jong, \{C. A.\} and Li, \{K. S.\} and Chen, \{M. C.\} and Liu, \{C. W.\}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 62nd IEEE International Electron Devices Meeting, IEDM 2016 ; Conference date: 03-12-2016 Through 07-12-2016",
year = "2016",
month = dec,
doi = "10.1109/IEDM.2016.7838400",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "12.1.1--12.1.4",
booktitle = "2016 IEEE International Electron Devices Meeting, IEDM 2016",
}