Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs

M. H. Lee, S. T. Fan, C. H. Tang, P. G. Chen, Y. C. Chou, H. H. Chen, J. Y. Kuo, M. J. Xie, S. N. Liu, M. H. Liao, C. A. Jong, K. S. Li, M. C. Chen, C. W. Liu

    研究成果: 書貢獻/報告類型會議論文篇章

    66 引文 斯高帕斯(Scopus)

    摘要

    Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm, SS = 52 mV/dec, hysteresis free (threshold voltage shift = 0.8 mV), and 0.65 nm CET (capacitance equivalent thickness). The NC-FinFET modeling is validated on standard 14nm FinFET. The transient behavior of gate and drain current response are exhibited with triangular gate voltage sweep. The dynamic NC model with compact equivalent circuit for ultra-thin FE-HZO is established with experimental data validation, and estimates the fast response. A feasible concept of coupling the ultra-thin FE-HZO (1.x nm) with NC as gate stack paves a promising solution for sub-10nm technology node.

    原文英語
    主出版物標題2016 IEEE International Electron Devices Meeting, IEDM 2016
    發行者Institute of Electrical and Electronics Engineers Inc.
    頁面12.1.1-12.1.4
    ISBN(電子)9781509039012
    DOIs
    出版狀態已發佈 - 2017 一月 31
    事件62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, 美国
    持續時間: 2016 十二月 32016 十二月 7

    出版系列

    名字Technical Digest - International Electron Devices Meeting, IEDM
    ISSN(列印)0163-1918

    其他

    其他62nd IEEE International Electron Devices Meeting, IEDM 2016
    國家/地區美国
    城市San Francisco
    期間2016/12/032016/12/07

    ASJC Scopus subject areas

    • 電子、光磁材料
    • 凝聚態物理學
    • 電氣與電子工程
    • 材料化學

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