Physical properties of amorphous Mo-doped In-Ga-Zn-O films grown by magnetron co-sputtering technique

Shiu Jen Liu; Hau Wei Fang; Jang Hsing Hsieh; Jenh Yih Juang

doi:10.1016/j.materresbull.2012.02.021

Physical properties of amorphous Mo-doped In-Ga-Zn-O films grown by magnetron co-sputtering technique

Shiu Jen Liu^*
, Hau Wei Fang
, Jang Hsing Hsieh
, Jenh Yih Juang

^*此作品的通信作者

物理學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

16 引文斯高帕斯（Scopus）

摘要

Amorphous thin films of In-Ga-Zn-O (a-IGZO) doped with Mo have been fabricated by using magnetron co-sputtering technique. The Mo concentration in a-IGZO films was modulated by varying the sputtering power applied on the Mo target. The electrical, optical and magnetic properties of Mo-doped a-IGZO films grown on glasses were investigated. The carrier density and mobility of a-IGZO films can be remarkably enhanced by low concentration Mo doping. On the other hand, the optical bandgap of a-IGZO films is not significantly affected by Mo doping. However, the transmission is decreased with increasing the Mo doping. Moreover, all Mo-doped films exhibit room-temperature ferromagnetism.

原文	英語
頁（從 - 到）	1568-1571
頁數	4
期刊	Materials Research Bulletin
卷	47
發行號	6
DOIs	https://doi.org/10.1016/j.materresbull.2012.02.021
出版狀態	已發佈 - 2012 6月

ASJC Scopus subject areas

一般材料科學
凝聚態物理學
材料力學
機械工業

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@article{6bdb0dcfb6604641959d8affb994eb50,

title = "Physical properties of amorphous Mo-doped In-Ga-Zn-O films grown by magnetron co-sputtering technique",

abstract = "Amorphous thin films of In-Ga-Zn-O (a-IGZO) doped with Mo have been fabricated by using magnetron co-sputtering technique. The Mo concentration in a-IGZO films was modulated by varying the sputtering power applied on the Mo target. The electrical, optical and magnetic properties of Mo-doped a-IGZO films grown on glasses were investigated. The carrier density and mobility of a-IGZO films can be remarkably enhanced by low concentration Mo doping. On the other hand, the optical bandgap of a-IGZO films is not significantly affected by Mo doping. However, the transmission is decreased with increasing the Mo doping. Moreover, all Mo-doped films exhibit room-temperature ferromagnetism.",

keywords = "A. Amorphous materials, A. Semiconductors, B. Sputtering, D. Electrical properties, D. Magnetic properties, D. Optical properties",

author = "Liu, \{Shiu Jen\} and Fang, \{Hau Wei\} and Hsieh, \{Jang Hsing\} and Juang, \{Jenh Yih\}",

note = "Funding Information: This work was supported by the National Science Council of Taiwan , under Grant No. NSC 98-2112-M-003-005-MY3 .",

year = "2012",

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doi = "10.1016/j.materresbull.2012.02.021",

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T1 - Physical properties of amorphous Mo-doped In-Ga-Zn-O films grown by magnetron co-sputtering technique

AU - Liu, Shiu Jen

AU - Fang, Hau Wei

AU - Hsieh, Jang Hsing

AU - Juang, Jenh Yih

N1 - Funding Information: This work was supported by the National Science Council of Taiwan , under Grant No. NSC 98-2112-M-003-005-MY3 .

PY - 2012/6

Y1 - 2012/6

N2 - Amorphous thin films of In-Ga-Zn-O (a-IGZO) doped with Mo have been fabricated by using magnetron co-sputtering technique. The Mo concentration in a-IGZO films was modulated by varying the sputtering power applied on the Mo target. The electrical, optical and magnetic properties of Mo-doped a-IGZO films grown on glasses were investigated. The carrier density and mobility of a-IGZO films can be remarkably enhanced by low concentration Mo doping. On the other hand, the optical bandgap of a-IGZO films is not significantly affected by Mo doping. However, the transmission is decreased with increasing the Mo doping. Moreover, all Mo-doped films exhibit room-temperature ferromagnetism.

AB - Amorphous thin films of In-Ga-Zn-O (a-IGZO) doped with Mo have been fabricated by using magnetron co-sputtering technique. The Mo concentration in a-IGZO films was modulated by varying the sputtering power applied on the Mo target. The electrical, optical and magnetic properties of Mo-doped a-IGZO films grown on glasses were investigated. The carrier density and mobility of a-IGZO films can be remarkably enhanced by low concentration Mo doping. On the other hand, the optical bandgap of a-IGZO films is not significantly affected by Mo doping. However, the transmission is decreased with increasing the Mo doping. Moreover, all Mo-doped films exhibit room-temperature ferromagnetism.

KW - A. Amorphous materials

KW - A. Semiconductors

KW - B. Sputtering

KW - D. Electrical properties

KW - D. Magnetic properties

KW - D. Optical properties

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UR - https://www.scopus.com/pages/publications/84862786209#tab=citedBy

U2 - 10.1016/j.materresbull.2012.02.021

DO - 10.1016/j.materresbull.2012.02.021

M3 - Article

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SN - 0025-5408

VL - 47

SP - 1568

EP - 1571

JO - Materials Research Bulletin

JF - Materials Research Bulletin

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ER -

Physical properties of amorphous Mo-doped In-Ga-Zn-O films grown by magnetron co-sputtering technique

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